ESDLW - ESJLW Taiwan Semiconductor 0.8A, 200V - 600V Surface Mount Super Fast Rectifier FEATURES KEY PARAMETERS Glass passivated junction chip PARAMETER VALUE UNIT Ideal for automated placement I 0.8 A F(AV) Low profile package V 200 - 600 V RRM Low power loss, high efficiency Moisture sensitivity level: level 1, per J-STD-020 I 20 A FSM Compliant to RoHS Directive 2011/65/EU and T 150 C J MAX in accordance to WEEE 2002/96/EC Package SOD-123W Halogen-free according to IEC 61249-2-21 Configuration Single die APPLICATIONS Switching Mode Power Supplies Lighting On-board DC/DC converter MECHANICAL DATA Case: SOD-123W Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 16mg (approximately) SOD-123W ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A ESDLW ESGLW ESJLW PARAMETER SYMBOL UNIT Marking code on the device ESDLW ESGLW ESJLW Repetitive peak reverse voltage V 200 400 600 V RRM Reverse voltage, total rms value V 140 280 420 V R(RMS) Forward current I 0.8 A F(AV) Surge peak forward current, 8.3 ms single half I 20 A FSM sine-wave superimposed on rated load per diode Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version:C1812 ESDLW - ESJLW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP. UNIT Junction-to-lead thermal resistance per diode R 34 C/W JL Junction-to-ambient thermal resistance per diode R 88 C/W JA Junction-to-case thermal resistance per diode R 35 C/W JC Thermal Performance Note: Units mounted on recommended PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT I = 0.4A, T = 25C 0.80 - V F J I = 0.8A, T = 25C 0.85 0.95 V F J ESDLW I = 0.4A, T = 125C 0.65 - V F J 0.72 0.80 I = 0.8A, T = 125C V F J I = 0.4A, T = 25C 0.88 - F J V I = 0.8A, T = 25C 0.96 1.30 F J V (1) Forward voltage per diode ESGLW V F I = 0.4A, T = 125C 0.69 - V F J I = 0.8A, T = 125C 0.77 1.05 V F J I = 0.4A, T = 25C 1.03 - V F J 1.14 1.70 I = 0.8A, T = 25C V F J ESJLW I = 0.4A, T = 125C 0.82 - F J V I = 0.8A, T = 125C 0.94 1.30 F J V T = 25C - 1 A J (2) Reverse current rated V per diode I R R T = 125C - 150 A J 21 - ESDLW pF Junction capacitance ESGLW 1 MHz, V =4.0V C 20 - pF R J 19 - ESJLW pF I =0.5A , I =1.0A F R - 35 Reverse recovery time t ns rr I =0.25A RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING (Note 1, 2) ESxLWHRVG SOD-123W 3,000 / 7 Plastic Reel ESxLWHRQG SOD-123W 10,000 / 13 Paper Reel ESxLW RVG SOD-123W 3,000 / 7 Plastic Reel ESxLW RQG SOD-123W 10,000 / 13 Paper Reel Notes: 1. defines voltage from 200V (ESDLW) to 600V (ESJLW) 2. means AEC-Q101 qualified 2 Version:C1812