333 3 VS-2EGH02HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 A FRED Pt FEATURES Ultrafast recovery time, reduced Q and sof t rr recovery 175 C maximum operating junction temperature Cathode Anode Specific for output and snubber operation Low forward voltage drop Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak SMB (DO-214AA) of 260 C AEC-Q101 qualified, meets JESD 201 class 2 whisker test Material categorization: for definitions of compliance LINKS TO ADDITIONAL RESOURCES please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS 3D Models State of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop, ultrafast recovery time, and fast recovery. The planar structure and the platinum doped life time control PRIMARY CHARACTERISTICS guarantee the best overall performance, ruggedness and I 2 A F(AV) reliability characteristics. V 200 V R These devices are intended for use in snubber, output V at I 0.66 V F F operation, inverters or as freewheeling diodes. t typ. 24 ns rr Their extremely optimized stored charge and low recovery T max. 175 C J current minimize the switching losses and reduce over Package SMB (DO-214AA) dissipation in the switching element. Circuit configuration Single MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 200 V RRM (1) Average rectified forward current I T = 150 C 2 F(AV) L A Non-repetitive peak surge current I T = 25 C, 6 ms square pulse 70 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg Note (1) Mounted on PCB with 6 mm x 3.5 mm lands ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 200 - - BR R R I = 2 A - 0.84 0.9 V F Forward voltage V F I = 2 A, T = 150 C - 0.66 0.7 F J V = V rated - - 2 R R Reverse leakage current I A R T = 150 C, V = V rated - - 20 J R R Junction capacitance C V = 200 V - 12 - pF T R Critical rate if rise of reverse voltage dV/dt - - 10 000 V/s Revision: 17-Mar-2021 Document Number: 94859 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DVS-2EGH02HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 24 - F F R I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 27 - F F R Reverse recovery time t I = 0.5 A, I = 1 A, I = 0.25 A - - 23 ns rr F R rr T = 25 C -21 - J T = 125 C - 26 - J I = 2 A F T = 25 C - 2.7 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 3.4 - J V = 100 V R T = 25 C - 28 - J Reverse recovery charge Q nC rr T = 125 C - 43 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -65 - 175 C J Stg (1) Thermal resistance, junction to mount R --17 thJM C/W (1) Thermal resistance, junction to ambient R -- 80 thJA 0.1 g Approximate Weight 0.003 oz. Marking device Case style SMB (DO-214AA) 2H2 Note (1) Units mounted on PCB 6 mm x 3.5 mm land areas 100 100 175 C 10 150 C 125 C 1 T = 175 C 10 J 0.1 T = 150 C J 0.01 1 25 C T = 125 C J T = 25 C J 0.001 T = -40 C J 0.0001 0.1 0 50 100 150 200 0.3 0.5 0.7 0.9 1.1 1.3 1.5 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 17-Mar-2021 Document Number: 94859 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R