333 3 VS-2EJH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 A FRED Pt FEATURES Hyperfast recovery time, reduced Q , and eSMP Series rr soft recovery 175 C maximum operating junction temperature Specific for output and snubber operation Low forward voltage drop Bottom View Top View Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak SlimSMA (DO-221AC) of 260 C AEC-Q101 qualified, meets JESD 201 class 2 whisker test Cathode Anode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically 3D Models designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control PRIMARY CHARACTERISTICS guarantee the best overall performance, ruggedness and reliability characteristics. I 2 A F(AV) V 200 V These devices are intended for use in snubber, boost, R lighting, piezo-injection, as high frequency rectifiers and V at I 0.72 V F F freewheeling diodes. t 25 ns rr The extremely optimized stored charge and low recovery T max. 175 C J current minimize the switching losses and reduce power Package SlimSMA (DO-221AC) dissipation in the switching element. Circuit configuration Single MECHANICAL DATA Case: SlimSMA (DO-221AC) Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 200 V RRM (1) Average rectified forward current I T = 155 C 2 F(AV) C A Non-repetitive peak surge current I T = 25 C 65 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg Note (1) Device on PCB with 8 mm x 16 mm soldering lands ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 200 - - BR R R I = 2 A - 0.85 0.93 V F Forward voltage V F I = 2 A, T = 125 C - 0.72 0.77 F J V = V rated - - 2 R R Reverse leakage current I A R T = 125 C, V = V rated - 1 8 J R R Junction capacitance C V = 200 V - 10 - pF T R Revision: 04-Feb-2021 Document Number: 94880 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-2EJH02HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 25 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R rr Reverse recovery time t ns rr T = 25 C -17 - J T = 125 C - 24 - J I = 2 A F T = 25 C - 2 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 3 - J V = 160 V R T = 25 C - 17 - J Reverse recovery charge Q nC rr T = 125 C - 37 - J THERMAL - MECHANICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature T , T -65 - 175 C J Stg range Device mounted on PCB with Thermal resistance, junction to mount R -- 12 thJM 8 mm x 16 mm soldering lands C/W Device mounted on PCB with Thermal resistance, junction to ambient R - - 115 thJA 2 mm x 3.5 mm soldering lands 0.03 g Approximate weight 0.0011 oz. Marking device Case style SlimSMA (DO-221AC) 2H2 100 100 175 C 10 150 C T = 175 C 10 J 1 125 C 0.1 T = 150 C J 25 C 1 0.01 T = 125 C J T = 25 C J 0.001 T = -40 C J 0.1 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 100 150 200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 04-Feb-2021 Document Number: 94880 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R