VS-2EGH02HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 A FRED Pt FEATURES Ultrafast recovery time, reduced Q and soft rr recovery 175 C maximum operating junction temperature Specific for output and snubber operation Low forward voltage drop Cathode Anode Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified, meets JESD 201 class 2 whisker test SMB (DO-214AA) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS State of the art ultrafast recovery rectifiers designed with I 2 A F(AV) optimized performance of forward voltage drop, ultrafast V 200 V R recovery time, and fast recovery. V at I 0.66 V F F The planar structure and the platinum doped life time control t typ. 24 ns rr guarantee the best overall performance, ruggedness and reliability characteristics. T max. 175 C J These devices are intended for use in snubber, output Package SMB (DO-214AA) operation, inverters or as freewheeling diodes. Circuit configuration Single Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 200 V RRM (1) Average rectified forward current I T = 150 C 2 F(AV) L A Non-repetitive peak surge current I T = 25 C 70 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg Note (1) Mounted on PCB with 6 mm x 3.5 mm lands ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R V I = 2 A - 0.84 0.9 F Forward voltage V F I = 2 A, T = 150 C - 0.66 0.7 F J V = V rated - - 2 R R Reverse leakage current I A R T = 150 C, V = V rated - - 20 J R R Junction capacitance C V = 200 V - 12 - pF T R Critical rate if rise of reverse voltage dV/dt - - 10 000 V/s Revision: 07-Sep-17 Document Number: 94859 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-2EGH02HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 24 - F F R I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 27 - F F R Reverse recovery time t I = 0.5 A, I = 1 A, I = 0.25 A - - 23 ns rr F R rr = 25 C T -21 - J T = 125 C - 26 - J I = 2 A F T = 25 C - 2.7 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 3.4 - J V = 100 V R T = 25 C - 28 - J Reverse recovery charge Q nC rr T = 125 C - 43 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, (1) R --17 thJC junction to case C/W Thermal resistance, (1) R -- 80 thJA junction to ambient 0.1 g Approximate Weight 0.003 oz. Marking device Case style SMB (DO-214AA) 2H2 Note (1) Units mounted on PCB 6 mm x 3.5 mm land areas 100 100 175 C 10 150 C 125 C 1 10 T = 175 C j 0.1 T = 150 C 0.01 1 j 25 C T = 25 C 0.001 j 0.1 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 50 100 150 200 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 07-Sep-17 Document Number: 94859 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R