CE3512K2-C1 CEL

RF Low Noise FET CE3512K2 12 GHz Super Low Noise FET in Hollow Plastic PKG Enter a Short Document/Title Name Here DESCRIPTION PACKAGE Super Low Noise and High Gain Micro-X plastic package Hollow (Air Cavity) Plastic package FEATURES Super Low noise figure and high associated gain: NF = 0.30 dB TYP., Ga = 13.7 dB TYP. V = 2 V, I = 10 mA, f = 12 GHz DS D APPLICATIONS DBS LNB gain-stage, Mix-stage Low noise amplifier for microwave communication systems ORDERING INFORMATION Part Number Order Number Package Marking Description CE3512K2 CE3512K2-C1 Micro-X plastic C5 Embossed tape 8 mm wide package Pin 4 (Gate) faces the perforation side of the tape MOQ 10 kpcs/reel This document is subject to change without notice. Date Published: July 2016 CDS-0018-05 (Issue A) 1 CE3512K2 PIN CONFIGURATION AND INTERNAL BLOCK DIAGRAM Pin No. Pin Name 1 Source 2 Drain 3 Source 4 Gate ABSOLUTE MAXIMUM RATINGS (TA = +25C, unless otherwise specified) Parameter Symbol Rating Unit Drain to Source Voltage V 4.0 V DS Gate to Source Voltage V -3.0 V GS Drain Current I I mA D DSS Gate Current I 80 A G Total Power Dissipation P 125 mW tot C Channel Temperature T +150 ch Storage Temperature T -55 to +125 C stg Note -55 to +125 C Operation Temperature T op Note Refer to Total Power Dissipation vs. Ambient Temperature graph on page 4 RECOMMENDED OPERATING RANGE (TA = +25C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage V +1 +2 +3 V DS Drain Current I 5 10 15 mA D This document is subject to change without notice. 2