High Voltage Switching Diode BAS21H Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS HIGH VOLTAGE Compliant SWITCHING DIODE MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Continuous Reverse Voltage V 250 V R CATHODE ANODE Repetitive Peak Reverse Voltage V 250 V RRM Peak Forward Current I 200 mA F Repetitive Peak Forward Current I 500 mA MARKING FRM 2 DIAGRAM NonRepetitive Peak Forward Surge I 2.5 A FSM(surge) Current, 60 Hz NonRepetitive Peak Forward Current I A SOD323 1 FSM (Square Wave, T = 25C prior to JS M CASE 477 J surge) STYLE 1 t = 1 s 20 t = 10 s 20 t = 100 s 10 JS = Device Code t = 1 ms 4 1 t = 1 s M = Date Code* = PbFree Package THERMAL CHARACTERISTICS (Note: Microdot may be in either location) Characteristic Symbol Max Unit *Date Code orientation may vary depending up- on manufacturing location. Total Device Dissipation FR5 Board, P 200 mW D (Note 1) T = 25C A Derate above 25C 1.57 mW/C Thermal Resistance, C/W ORDERING INFORMATION JunctiontoAmbient R 635 JA JunctiontoLead R 240 Device Package Shipping JL JunctiontoTop R 436 JT BAS21HT1G, SOD323 3000 / Tape & Reel Junction and Storage Temperature T , T 55 to C J stg NSVBAS21HT1G (PbFree) Range +150 BAS21HT3G, SOD323 10000 / Tape & Stresses exceeding those listed in the Maximum Ratings table may damage the NSVBAS21HT3G (PbFree) Reel device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. For information on tape and reel specifications, 1. FR5 Minimum Pad including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2020 Rev. 14 BAS21HT1/DBAS21H ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I Adc R (V = 200 Vdc) 0.1 R (V = 200 Vdc, T = 150C) 100 R J Reverse Breakdown Voltage V 250 Vdc (BR) (I = 100 Adc) BR Forward Voltage V mV F (I = 100 mAdc) 1000 F (I = 200 mAdc) 1250 F Diode Capacitance C 5.0 pF D (V = 0, f = 1.0 MHz) R Reverse Recovery Time t 50 ns rr (I = I = 30 mAdc, R = 100 ) F R L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H 10% rr 0.1 F 90% D.U.T. i = 3.0 mA R(REC) 50 INPUT 50 OUTPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 30 mA MEASURED F R at i = 3.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 30 mA. F Notes: 2. Input pulse is adjusted so I is equal to 30 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2