Product Information

BAS21SLT1G

BAS21SLT1G electronic component of ON Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching 250V 200mA
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.045 ea
Line Total: USD 0.9

1125 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 20  Multiples: 20
Pack Size: 20

 More Buying Options & Price Grid(s)

Availability Price Quantity
2910 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

BAS21SLT1G
ON Semiconductor

3000 : USD 0.0307
9000 : USD 0.0255
24000 : USD 0.025
45000 : USD 0.025
99000 : USD 0.025

34920 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

BAS21SLT1G
ON Semiconductor

1 : USD 0.0688
10 : USD 0.0681
25 : USD 0.0655
100 : USD 0.0498
250 : USD 0.0485
500 : USD 0.0472
1000 : USD 0.0459
3000 : USD 0.0446
6000 : USD 0.0437
15000 : USD 0.0437
30000 : USD 0.0437

20370 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

BAS21SLT1G
ON Semiconductor

3000 : USD 0.0252

1125 - WHS 4


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 20
Multiples : 20

Stock Image

BAS21SLT1G
ON Semiconductor

20 : USD 0.045
200 : USD 0.0372
600 : USD 0.0331
3000 : USD 0.0279
9000 : USD 0.0258
21000 : USD 0.0246

1256 - WHS 5


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 20
Multiples : 5

Stock Image

BAS21SLT1G
ON Semiconductor

20 : USD 0.0611
100 : USD 0.0416
485 : USD 0.0338
1325 : USD 0.0325
12000 : USD 0.0312

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Category
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Additional Infomation About Product

BAS21SLT1G, NSVBAS21SLT1G Dual Series High-Voltage Switching Diode, 250V Features www.onsemi.com Moisture Sensitivity Level: 1 ESD Rating Human Body Model: Class 1 ANODE CATHODE ESD Rating Machine Model: Class B 1 2 These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3 Compliant CATHODE/ANODE NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 3 Qualified and PPAP Capable 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit SOT23 Continuous Reverse Voltage V 250 Vdc CASE 318 R STYLE 11 Repetitive Peak Reverse Voltage V 250 Vdc RRM Peak Forward Current I 225 mAdc F MARKING DIAGRAM Peak Forward Surge Current I 625 mAdc FM(surge) THERMAL CHARACTERISTICS JT M Characteristic Symbol Max Unit 1 Total Device Dissipation FR5 Board P 225 mW D (Note 1) JT = Device Code T = 25C A Derate above 25C 1.8 mW/C M = Date Code* = PbFree Package Thermal Resistance, 556 C/W R JA (Note: Microdot may be in either location) Junction to Ambient *Date Code orientation and/or overbar may Total Device Dissipation P 300 mW D vary depending upon manufacturing location. Alumina Substrate, (Note 2) T = 25C A Derate above 25C 2.4 mW/C ORDERING INFORMATION Thermal Resistance, R 417 C/W JA Junction to Ambient Device Package Shipping Junction and Storage T , T 55 to C J stg BAS21SLT1G SOT23 3000 / Tape & Reel Temperature Range +150 (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the NSVBAS21SLT1G SOT23 3000 / Tape & Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. For information on tape and reel specifications, 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2000 1 Publication Order Number: October, 2016 Rev. 7 BAS21SLT1/DBAS21SLT1G, NSVBAS21SLT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I Adc R (V = 200 Vdc) 0.1 R (V = 200 Vdc, T = 150C) 100 R J Reverse Breakdown Voltage V 250 Vdc (BR) (I = 100 Adc) BR Forward Voltage V mV F (I = 100 mAdc) 1000 F (I = 200 mAdc) 1250 F Diode Capacitance C 5.0 pF D (V = 0, f = 1.0 MHz) R Reverse Recovery Time t 50 ns rr (I = I = 30 mAdc, R = 100 ) F R L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 3.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 30 mA MEASURED F R at i = 3.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 30 mA. F Notes: 2. Input pulse is adjusted so I is equal to 30 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit 1200 7000 6000 T = 55C A T = 155C A 1000 5000 25C 4000 3000 800 155C 6 600 5 4 400 3 T = 25C A 2 200 T = 55C 1 A 1 0 1 10 100 1000 1 2 5 10 20 50 100 200 300 FORWARD CURRENT (mA) REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage www.onsemi.com 2 FORWARD VOLTAGE (mV) REVERSE CURRENT (nA)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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