BAS21SLT1G ON Semiconductor

BAS21SLT1G, NSVBAS21SLT1G Dual Series High-Voltage Switching Diode, 250V Features www.onsemi.com Moisture Sensitivity Level: 1 ESD Rating Human Body Model: Class 1 ANODE CATHODE ESD Rating Machine Model: Class B 1 2 These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3 Compliant CATHODE/ANODE NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 3 Qualified and PPAP Capable 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit SOT23 Continuous Reverse Voltage V 250 Vdc CASE 318 R STYLE 11 Repetitive Peak Reverse Voltage V 250 Vdc RRM Peak Forward Current I 225 mAdc F MARKING DIAGRAM Peak Forward Surge Current I 625 mAdc FM(surge) THERMAL CHARACTERISTICS JT M Characteristic Symbol Max Unit 1 Total Device Dissipation FR5 Board P 225 mW D (Note 1) JT = Device Code T = 25C A Derate above 25C 1.8 mW/C M = Date Code* = PbFree Package Thermal Resistance, 556 C/W R JA (Note: Microdot may be in either location) Junction to Ambient *Date Code orientation and/or overbar may Total Device Dissipation P 300 mW D vary depending upon manufacturing location. Alumina Substrate, (Note 2) T = 25C A Derate above 25C 2.4 mW/C ORDERING INFORMATION Thermal Resistance, R 417 C/W JA Junction to Ambient Device Package Shipping Junction and Storage T , T 55 to C J stg BAS21SLT1G SOT23 3000 / Tape & Reel Temperature Range +150 (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the NSVBAS21SLT1G SOT23 3000 / Tape & Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. For information on tape and reel specifications, 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2000 1 Publication Order Number: October, 2016 Rev. 7 BAS21SLT1/DBAS21SLT1G, NSVBAS21SLT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I Adc R (V = 200 Vdc) 0.1 R (V = 200 Vdc, T = 150C) 100 R J Reverse Breakdown Voltage V 250 Vdc (BR) (I = 100 Adc) BR Forward Voltage V mV F (I = 100 mAdc) 1000 F (I = 200 mAdc) 1250 F Diode Capacitance C 5.0 pF D (V = 0, f = 1.0 MHz) R Reverse Recovery Time t 50 ns rr (I = I = 30 mAdc, R = 100 ) F R L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 3.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 30 mA MEASURED F R at i = 3.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 30 mA. F Notes: 2. Input pulse is adjusted so I is equal to 30 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit 1200 7000 6000 T = 55C A T = 155C A 1000 5000 25C 4000 3000 800 155C 6 600 5 4 400 3 T = 25C A 2 200 T = 55C 1 A 1 0 1 10 100 1000 1 2 5 10 20 50 100 200 300 FORWARD CURRENT (mA) REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage www.onsemi.com 2 FORWARD VOLTAGE (mV) REVERSE CURRENT (nA)