BAS 28 E6327 Infineon

BAS28... Silicon Switching Diode For high-speed switching applications Electrical insulated diodes 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAS28/W Type Package Configuration Marking BAS28 SOT143 parallel pair JTs BAS28W SOT343 parallel pair JTs Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 80 V Diode reverse voltage V R 85 Peak reverse voltage V RM 200 mA Forward current I F Peak forward current I - FM Surge forward current, t = 1 s I 4.5 A FS Non-repetitive peak surge forward current I - FSM mW Total power dissipation P tot BAS28, T 31C 330 S BAS28W, T 103C 250 S 150 C Junction temperature T j Storage temperature T -55 ... 150 stg 1 Pb-containing package may be available upon special request 1 2007-04-19BAS28... Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BAS28 360 BAS28W 190 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 85 - - V Breakdown voltage V (BR) I = 100 A (BR) Reverse current I A R V = 75 V - - 0.1 R V = 25 V, T = 150 C - - 30 R A V = 75 V, T = 150 C - - 50 R A mV Forward voltage V F I = 1 mA - - 715 F I = 10 mA - - 855 F I = 50 mA - - 1000 F I = 100 mA - - 1200 F I = 150 mA - - 1250 F AC Characteristics - - 2 pF Diode capacitance C T V = 0 V, f = 1 MHz R Reverse recovery time t - - 4 ns rr I = 10 mA, I = 10 mA, measured at I = 1mA , F R R R = 100 L Test circuit for reverse recovery time D.U.T. Pulse generator: t = 100ns, D = 0.05, p t = 0.6ns, R = 50 r i Oscillograph F Oscillograph: R = 50 , t = 0.35ns, r C 1pF EHN00019 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2007-04-19