Product Information

BAS21TMR6T1G

BAS21TMR6T1G electronic component of ON Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching 250V HIGH VTG SWITCH
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4025 ea
Line Total: USD 0.4

12743 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
29036 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5

Stock Image

BAS21TMR6T1G
ON Semiconductor

5 : USD 0.1175
50 : USD 0.0941
150 : USD 0.0825
500 : USD 0.0737
3000 : USD 0.0667
6000 : USD 0.0632

12743 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

BAS21TMR6T1G
ON Semiconductor

1 : USD 0.4025
10 : USD 0.2794
100 : USD 0.1162
1000 : USD 0.0851
3000 : USD 0.0679
9000 : USD 0.0586
24000 : USD 0.0575
45000 : USD 0.0529

Read More Specifications

     
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RoHS - XON
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Additional Infomation About Product

BAS21TMR6 High Voltage Switching Diode The BAS21TMR6T1G device houses three highvoltage switching diodes in a SC74 surface mount package. This device is ideal for lowpower surface mount applications where board space is at a www.onsemi.com premium. Features 250 V Reduces Board Space HIGH VOLTAGE NSV Prefix for Automotive and Other Applications Requiring SWITCHING DIODE Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 65 4 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit 1 23 Reverse Voltage V 250 Vdc R Forward Current I 200 mAdc F 4 5 6 Peak Forward Surge Current I 625 mAdc FM(surge) SC74 CASE 318F THERMAL CHARACTERISTICS 3 2 1 Characteristic Symbol Max Unit Total Device Dissipation P D MARKING DIAGRAM 311 mW FR5 Board (Note 1) T = 25C A 2.5 mW/C Derate above 25C Thermal Resistance, R 402 C/W JA RAA M JunctiontoAmbient Total Device Dissipation P D 347 mW Alumina Substrate, (Note 2) T = 25C A RAA = Device Code 2.8 mW/C Derate above 25C M = Date Code* Thermal Resistance, 360 C/W R = PbFree Package JA JunctiontoAmbient (Note: Microdot may be in either location) Junction and Storage Temperature T , T 55 to C J stg *Date Code orientation may vary depending +150 upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 2 1. FR4 10 mm , 2 oz copper traces 2 2. FR4 25 mm , 2 oz copper traces Device Package Shipping BAS21TMR6T1G SC74 3000 / (PbFree) Tape & Reel NSVBAS21TMR6T1G SC74 3000 / (PbFree) Tape & Reel NSVBAS21TMR6T2G SC74 3000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 Publication Order Number: 1 September, 2015 Rev. 1 BAS21TMR6/DBAS21TMR6 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit Reverse Voltage Leakage Current I Adc R (V = 200 Vdc) 0.1 R (V = 200 Vdc, T = 150C) 100 R J Reverse Breakdown Voltage (I = 100 Adc) V 250 Vdc BR (BR) Forward Voltage V Vdc F (I = 100 mAdc) 1.0 F (I = 200 mAdc) 1.25 F Diode Capacitance (V = 0, f = 1.0 MHz) C 5.0 pF R D Reverse Recovery Time (I = I = 30 mAdc, I = 3.0 mAdc, R = 100) t 50 ns F R R(REC) L rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. I = 3.0 mA R(REC) 50 OUTPUT 50 INPUT I R SAMPLING V PULSE R OUTPUT PULSE OSCILLOSCOPE GENERATOR INPUT SIGNAL (I = I = 30 mA MEASURED F R at I = 3.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 30 mA. F Notes: 2. Input pulse is adjusted so I is equal to 30 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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