BAS21TMR6T1G ON Semiconductor

BAS21TMR6 High Voltage Switching Diode The BAS21TMR6T1G device houses three highvoltage switching diodes in a SC74 surface mount package. This device is ideal for lowpower surface mount applications where board space is at a www.onsemi.com premium. Features 250 V Reduces Board Space HIGH VOLTAGE NSV Prefix for Automotive and Other Applications Requiring SWITCHING DIODE Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 65 4 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit 1 23 Reverse Voltage V 250 Vdc R Forward Current I 200 mAdc F 4 5 6 Peak Forward Surge Current I 625 mAdc FM(surge) SC74 CASE 318F THERMAL CHARACTERISTICS 3 2 1 Characteristic Symbol Max Unit Total Device Dissipation P D MARKING DIAGRAM 311 mW FR5 Board (Note 1) T = 25C A 2.5 mW/C Derate above 25C Thermal Resistance, R 402 C/W JA RAA M JunctiontoAmbient Total Device Dissipation P D 347 mW Alumina Substrate, (Note 2) T = 25C A RAA = Device Code 2.8 mW/C Derate above 25C M = Date Code* Thermal Resistance, 360 C/W R = PbFree Package JA JunctiontoAmbient (Note: Microdot may be in either location) Junction and Storage Temperature T , T 55 to C J stg *Date Code orientation may vary depending +150 upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 2 1. FR4 10 mm , 2 oz copper traces 2 2. FR4 25 mm , 2 oz copper traces Device Package Shipping BAS21TMR6T1G SC74 3000 / (PbFree) Tape & Reel NSVBAS21TMR6T1G SC74 3000 / (PbFree) Tape & Reel NSVBAS21TMR6T2G SC74 3000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 Publication Order Number: 1 September, 2015 Rev. 1 BAS21TMR6/DBAS21TMR6 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit Reverse Voltage Leakage Current I Adc R (V = 200 Vdc) 0.1 R (V = 200 Vdc, T = 150C) 100 R J Reverse Breakdown Voltage (I = 100 Adc) V 250 Vdc BR (BR) Forward Voltage V Vdc F (I = 100 mAdc) 1.0 F (I = 200 mAdc) 1.25 F Diode Capacitance (V = 0, f = 1.0 MHz) C 5.0 pF R D Reverse Recovery Time (I = I = 30 mAdc, I = 3.0 mAdc, R = 100) t 50 ns F R R(REC) L rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. I = 3.0 mA R(REC) 50 OUTPUT 50 INPUT I R SAMPLING V PULSE R OUTPUT PULSE OSCILLOSCOPE GENERATOR INPUT SIGNAL (I = I = 30 mA MEASURED F R at I = 3.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 30 mA. F Notes: 2. Input pulse is adjusted so I is equal to 30 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2