BAS40L, SBAS40L Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique 40 VOLTS Site and Control Change Requirements AECQ101 Qualified and SCHOTTKY BARRIER DIODES PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS SOT23 (TO236) Rating Symbol Value Unit CASE 318 Reverse Voltage V 40 V R STYLE 8 Forward Power Dissipation P F T = 25C 225 mW A Derate above 25C 1.8 mW/C 3 1 CATHODE ANODE Operating Junction and Storage T T 55 to +150 C J, stg Temperature Range MARKING DIAGRAM Forward Continuous Current I 120 mA F Forward Surge Current I mA FSM t 1 s 200 B1 M t 10 ms 600 Thermal Resistance (Note 1) R 508 C/W JA JunctiontoAmbient (Note 2) 311 B1 = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be = PbFree Package assumed, damage may occur and reliability may be affected. 1. FR4 minimum pad. (Note: Microdot may be in either location) 2. FR4 1.0 x 1.0 in pad. *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BAS40LT1G, SOT23 3,000 / SBAS40LT1G (PbFree) Tape & Reel BAS40LT3G, SOT23 10,000 / SBAS40LT3G (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1997 1 Publication Order Number: March, 2018 Rev. 12 BAS40LT1/DBAS40L, SBAS40L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit Reverse Breakdown Voltage V V (BR)R (I = 10 A) 40 R Total Capacitance C pF T (V = 1.0 V, f = 1.0 MHz) 5.0 R Reverse Leakage I Adc R (V = 25 V) 1.0 R Forward Voltage V mVdc F (I = 1.0 mAdc) 380 F Forward Voltage V mVdc F (I = 10 mAdc) 500 F Forward Voltage V Vdc F (I = 40 mAdc) 1.0 F Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL CHARACTERISTICS 100 100 T = 150C A 125C 10 10 85C 1.0 150C 0.1 1.0 1 25C 85C 25C 0.01 25C - 40C - 55C 0.1 0.001 25 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 5.0 10 15 20 V , REVERSE VOLTAGE (VOLTS) R V , FORWARD VOLTAGE (VOLTS) F Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse Voltage 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5.0 10 15 20 25 30 35 40 V , REVERSE VOLTAGE (VOLTS) R Figure 3. Typical Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , CAPACITANCE (pF) T I , REVERSE CURRENT (A) R