General Purpose Transistor NPN Silicon BC846BM3T5G, NSVBC846BM3T5G Features www.onsemi.com Moisture Sensitivity Level: 1 ESD Rating: Human Body Model: >4000 V COLLECTOR Machine Model: >400 V 3 NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AECQ101 BASE Qualified and PPAP Capable 2 This is a PbFree Device EMITTER MAXIMUM RATINGS MARKING Rating Symbol Value Unit DIAGRAM 3 CollectorEmitter Voltage V 65 Vdc CEO SOT723 CollectorBase Voltage V 80 Vdc CBO 1B M CASE 631AA 2 EmitterBase Voltage V 6.0 Vdc STYLE 1 EBO 1 Collector Current Continuous I 100 mAdc C 1B = Specific Device Code THERMAL CHARACTERISTICS M = Date Code Characteristic Symbol Max Unit Total Device Dissipation FR5 Board P 265 mW D (Note 1) ORDERING INFORMATION T = 25C A Device Package Shipping Derate above 25C 2.1 mW/C Thermal Resistance, R 470 C/W BC846BM3T5G SOT723 8000 / Tape & JA (PbFree) Reel Junction to Ambient (Note 1) NSVBC846BM3T5G SOT723 8000 / Tape & Total Device Dissipation P 640 mW D (PbFree) Reel Alumina Substrate (Note 2) T = 25C A For information on tape and reel specifications, Derate above 25C 5.1 mW/C including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Thermal Resistance, R 195 C/W JA Brochure, BRD8011/D. Junction to Ambient (Note 2) Junction and Storage T , T 55 to C J stg Temperature Range +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: July, 2021 Rev. 4 BC846BM3/DBC846BM3T5G, NSVBC846BM3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V V (BR)CEO (I = 10 mA) 65 C Collector Emitter Breakdown Voltage V V (BR)CES (I = 10 A, V = 0) 80 C EB Collector Base Breakdown Voltage V V (BR)CBO (I = 10 A) 80 C Emitter Base Breakdown Voltage V V (BR)EBO (I = 1.0 A) 6.0 E Collector Cutoff Current (V = 30 V) I 15 nA CB CBO (V = 30 V, T = 150C) 5.0 A CB A Base Peak Current I mA BM (t 1 s) 200 ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) 150 C CE (I = 2.0 mA, V = 5.0 V) 200 290 450 C CE Collector Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.25 V C B CE(sat) Collector Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.6 C B Base Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.7 V C B BE(sat) Base Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.9 C B Base Emitter Voltage (I = 1.0 mA, V = 5.0 V) V 550 645 700 mV C CE BE(on) Base Emitter Voltage (I = 2.0 mA, V = 5.0 V) 580 660 700 C CE Base Emitter Voltage (I = 10 mA, V = 5.0 V) 770 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) 100 C CE Output Capacitance C pF obo (V = 10 V, f = 1.0 MHz) 4.5 CB Noise Figure NF dB 10 (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2