TMMBAT41FILM STMicroelectronics

TMMBAT 41 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. MINIMELF This device has integrated protection against ex- (Glass) cessive voltage such as electrostatic discharges. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V Repetitive Peak Reverse Voltage 100 V RRM I Forward Continuous Current T = 25 C 100 mA F i I Repetitive Peak Forward Current t 1s 350 mA FRM p 0.5 I Surge non Repetitive Forward Current t = 10ms 750 mA FSM p P Power Dissipation 100 mW tot T = 95 C i T Storage and Junction Temperature Range - 65 to + 150 C stg T - 65 to + 125 j C T Maximum Temperature for Soldering during 15s 260 C L THERMAL RESISTANCE Symbol Test Conditions Value Unit R Junction-leads 300 C/W th(j-l) ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit V T = 25CI = 100A 100 V BR j R V * 0.4 0.45 V F T = 25CI = 1mA j F T 1 j = 25C IF = 200mA I * T = 25C V = 50V 0.1 A R j R T = 100C 20 j DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit C T = 25CV = 1V f = 1MHz 2pF j R * Pulse test: tp 300s < 2%. August 1999 Ed: 1A 1/4TMMBAT 41 Figure 1. Forward current versus forward Figure 2. Forward current versus forward voltage at different temperatures (typical voltage (typical values). values). Figure 3. Reverse current versus junction Figure 4. Reverse current versus continuous temperature. reverse voltage (typical values). 2/4