NTE5400 thru NTE5406 Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate, TO92 Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR thyristor) rated at 0.8 amps RMS maximum on state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millamp holding current and 8 amp surge ca- pabilities. Available in a TO92 plastic package, these devices feature excellent environmental stress and tem- perature cycling characteristics and, coupled with their small size and electrical performance, lend themselves to various types of control functions encountered with sensors, motors, lamps, relays, counters, triggers, etc. Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (T = +100C), V C RRM NTE5400 .................................................................... 30V NTE5401 .................................................................... 60V NTE5402 ................................................................... 100V NTE5403 ................................................................... 150V NTE5404 ................................................................... 200V NTE5405 ................................................................... 400V NTE5406 ................................................................... 600V Repetitive Peak OffState Voltage (T = +100C), V C DRXM NTE5400 .................................................................... 30V NTE5401 .................................................................... 60V NTE5402 ................................................................... 100V NTE5403 ................................................................... 150V NTE5404 ................................................................... 200V NTE5405 ................................................................... 400V NTE5406 ................................................................... 600V RMS OnState Current, I ..................................................... 0.8A T(RMS) Peak Surge (Non Repetitive) On State Current (One Cycle at 50 or 60Hz), I ............ 8A TSM Peak GateTrigger Current (3 s Max), I ........................................ 500mA GTM Peak Gate Power Dissipation (I I for 3s Max), P ........................ 500mW GT GTM GM Average Gate Power Dissipation, P .......................................... 100mW G(AV) Operating Temperature Range, T ......................................... 40 to +100C opr Storage Temperature Range, T .......................................... 40 to +150C stg Rev. 316Electrical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit I 10 A Peak OffState Current V = Max, V = Max, RRM RRM DRXM T = +100C, R = 1k C GK I 200 A DRXM Maximum OnState Voltage V T = +25C, I = 1.2A (Peak) 1.7 V TM C T DC Holding Current I T = +25C 3 mA HOLD C DC GateTrigger Current I V = 6VDC, R = 100, T = +25C 50 200 A GT D L C DC GateTrigger Voltage V V = 6VDC, R = 100, T = +25C 0.8 V GT D L C 2 2 2 I t for Fusing Reference I t > 1.5msoc 0.15 A sec Critical Rate of Applied dv/dt T = +100C 5 V/ s C Forward Voltage (critical) .135 (3.45) Min .210 Seating (5.33) Plane Max .500 .021 (.445) Dia Max (12.7) Min KG A .100 (2.54) .050 (1.27) .105 (2.67) Max .165 (4.2) Max .205 (5.2) Max .105 (2.67) Max