X-On Electronics has gained recognition as a prominent supplier of TM8050H-8W SCRs across the USA, India, Europe, Australia, and various other global locations. TM8050H-8W SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

TM8050H-8W STMicroelectronics

TM8050H-8W electronic component of STMicroelectronics
TM8050H-8W STMicroelectronics
TM8050H-8W SCRs
TM8050H-8W  Semiconductors

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Part No. TM8050H-8W
Manufacturer: STMicroelectronics
Category: SCRs
Description: SCRs 80 A High Temperature Thyristor (SCR)
Datasheet: TM8050H-8W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 13.2198 ea
Line Total: USD 13.22 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 600
Multiples : 600
600 : USD 3.9311

0
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 1
Multiples : 1
1 : USD 6.0641
10 : USD 5.4545
100 : USD 4.8746
500 : USD 4.5045
1000 : USD 4.2997

0
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 600
Multiples : 600
600 : USD 1.8396
1200 : USD 1.8144

0
Ship by Fri. 25 Jul to Wed. 30 Jul
MOQ : 39
Multiples : 1
39 : USD 3.1864

0
Ship by Fri. 25 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
1 : USD 13.2198
10 : USD 8.5439
30 : USD 8.3111
100 : USD 8.1169

0
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 9.5406
10 : USD 6.2447

0
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 8.8607
3 : USD 5.794
8 : USD 5.4819

0
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 3
Multiples : 1
3 : USD 4.9475
10 : USD 4.3687
25 : USD 3.6737
100 : USD 3.665
250 : USD 3.5918

0
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 3
Multiples : 1
3 : USD 4.0811

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Cnhts
Hts Code
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We are delighted to provide the TM8050H-8W from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TM8050H-8W and other electronic components in the SCRs category and beyond.

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TM8050H-8W Datasheet 80 A 800 V high temperature thyristor (SCR) in TO-247 package Features A High junction temperature: T = 150 C j Blocking voltage: V = V = 800 V DRM RRM G Nominal current: I = 80 A T(RMS) K Gate triggering current: I max. = 50 mA GT TAB = A High noise immunity: dV/dt > 1 kV/s Through hole package TO-247 Increase of thermal margin due to extended T up to 150 C j G A Low I and I in blocking state K D R Ecopack2 (includes halogen free & RoHS compliance) TO-247 uninsulated Applications AC-DC rectifier controlled bridge Variable speed motor drive Battery charging system AC solid state relay By pass switch of UPS Industrial welding systems Motor soft starter systems Product status link Description TM8050H-8W Available in through hole package TO-247, the TM8050H-8W is an 800 V SCR thyristor suitable for applications where high power switching (I = 80 A) and low T(RMS) Product summary power dissipation (V = 1.55 V at 160 A) are key features. These features make it TM I 80 A T(RMS) ideal for motorbike voltage regulator, by-pass AC switch, controlled rectifier bridge, solid state relay, battery charger, welding equipment and motor driver applications. V /V 800 V DRM RRM I 50 mA GT T 150 C j DS11583 - Rev 2 - August 2019 www.st.com For further information contact your local STMicroelectronics sales office.TM8050H-8W Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit I RMS on-state current (180 conduction angle) 80 A T(RMS) T = 126 C C I Average on-state current (180 conduction angle) 50 A T(AV) t = 8.3 ms 731 p I Non repetitive surge peak on-state current, V = 0 V T initial = 25 C A TSM R j t = 10 ms 670 p 2 2 2 T = 25 C 2245 I t I t value for fusing j A s V / V Maximum repetitive symmetric blocking voltage 800 V RRM DRM Critical rate of rise of on-state current dl/dt f = 50 Hz T = 25 C 200 A/s j I = 2 x I , tr 100 ns G GT I Peak gate current t = 20 s T = 150 C 8 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j V Maximum peak reverse gate voltage 5 V RGM T Storage junction temperature range -40 to +150 C stg T Maximum operating junction temperature -40 to +150 C j Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test Conditions Value Unit Min. 2.5 I V = 12 V, R = 33 mA GT D L Max. 50 V V = 12 V, R = 33 Max. 1.5 V GT D L V V = V , R = 3.3 k T = 150 C Min. 0.2 V GD D DRM L j I I = 500 mA, gate open Max. 100 mA H T I I = 1.2 x I Max. 125 mA L G GT t I = 80 A, V = V , I = 200 mA, dI /dt = 0.2 A/s gt T D DRM G G Typ. 3 s V = 67 % V , gate open T = 150 C dV/dt Min. 1000 V/s D DRM j I = 33 A, dI /dt = 10 A/s, V = 75 V, V = 400 V, dV /dt = T T R D D t T = 150 C Max. 150 s q j 20 V/s, t = 100 s P Table 3. Static characteristics Symbol Test conditions Value Unit V I = 160 A, t = 380 s T = 25 C Max. 1.55 TM TM p j V V T = 150 C On state threshold voltage Max. 0.85 TO j R T = 150 C On state dynamic resistance Max. 5.5 m D j I T = 25 C Max. 20 A DRM j V = V = V = V = 800 V D DRM R RRM I T = 150 C Max. 2.5 mA RRM j DS11583 - Rev 2 page 2/10

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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