TM8050H-8W Datasheet 80 A 800 V high temperature thyristor (SCR) in TO-247 package Features A High junction temperature: T = 150 C j Blocking voltage: V = V = 800 V DRM RRM G Nominal current: I = 80 A T(RMS) K Gate triggering current: I max. = 50 mA GT TAB = A High noise immunity: dV/dt > 1 kV/s Through hole package TO-247 Increase of thermal margin due to extended T up to 150 C j G A Low I and I in blocking state K D R Ecopack2 (includes halogen free & RoHS compliance) TO-247 uninsulated Applications AC-DC rectifier controlled bridge Variable speed motor drive Battery charging system AC solid state relay By pass switch of UPS Industrial welding systems Motor soft starter systems Product status link Description TM8050H-8W Available in through hole package TO-247, the TM8050H-8W is an 800 V SCR thyristor suitable for applications where high power switching (I = 80 A) and low T(RMS) Product summary power dissipation (V = 1.55 V at 160 A) are key features. These features make it TM I 80 A T(RMS) ideal for motorbike voltage regulator, by-pass AC switch, controlled rectifier bridge, solid state relay, battery charger, welding equipment and motor driver applications. V /V 800 V DRM RRM I 50 mA GT T 150 C j DS11583 - Rev 2 - August 2019 www.st.com For further information contact your local STMicroelectronics sales office.TM8050H-8W Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit I RMS on-state current (180 conduction angle) 80 A T(RMS) T = 126 C C I Average on-state current (180 conduction angle) 50 A T(AV) t = 8.3 ms 731 p I Non repetitive surge peak on-state current, V = 0 V T initial = 25 C A TSM R j t = 10 ms 670 p 2 2 2 T = 25 C 2245 I t I t value for fusing j A s V / V Maximum repetitive symmetric blocking voltage 800 V RRM DRM Critical rate of rise of on-state current dl/dt f = 50 Hz T = 25 C 200 A/s j I = 2 x I , tr 100 ns G GT I Peak gate current t = 20 s T = 150 C 8 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j V Maximum peak reverse gate voltage 5 V RGM T Storage junction temperature range -40 to +150 C stg T Maximum operating junction temperature -40 to +150 C j Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test Conditions Value Unit Min. 2.5 I V = 12 V, R = 33 mA GT D L Max. 50 V V = 12 V, R = 33 Max. 1.5 V GT D L V V = V , R = 3.3 k T = 150 C Min. 0.2 V GD D DRM L j I I = 500 mA, gate open Max. 100 mA H T I I = 1.2 x I Max. 125 mA L G GT t I = 80 A, V = V , I = 200 mA, dI /dt = 0.2 A/s gt T D DRM G G Typ. 3 s V = 67 % V , gate open T = 150 C dV/dt Min. 1000 V/s D DRM j I = 33 A, dI /dt = 10 A/s, V = 75 V, V = 400 V, dV /dt = T T R D D t T = 150 C Max. 150 s q j 20 V/s, t = 100 s P Table 3. Static characteristics Symbol Test conditions Value Unit V I = 160 A, t = 380 s T = 25 C Max. 1.55 TM TM p j V V T = 150 C On state threshold voltage Max. 0.85 TO j R T = 150 C On state dynamic resistance Max. 5.5 m D j I T = 25 C Max. 20 A DRM j V = V = V = V = 800 V D DRM R RRM I T = 150 C Max. 2.5 mA RRM j DS11583 - Rev 2 page 2/10