TN1605H-6FP High temperature 16 A SCRs Datasheet production data Applications Voltage regulator circuits for motorbikes Inrush current limiting circuits Motor control circuits and starters Light dimmers * Solid state relays . Description Thanks to a junction temperature up to 150 C and an insulated TO-220FPAB package, the TN1605H-6FP offers high thermal performance up to 16 A rms. The trade-off between the device s noise * immunity (dV/dt = 200 V/s), its gate triggering . current (I = 6 mA) and its turn-on current rise GT (dI/dt = 100 A/s) allows the design of robust and compact control circuits for voltage regulators in % 2 )3 7 motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances, and inrush current Features limiting circuits. The insulated fullpack package allows a High junction temperature: T = 150 C j back-to-back configuration. High noise immunity dV/dt = 200 V/s up to 150 C Gate triggering current I = 6 mA GT Table 1. Device summary Blocking voltage V /V = 600 V DRM RRM Order code Package V /V I DRM RRM GT High turn on current rise dI/dt: 100 A/s TN1605H-6FP TO-220FPAB 600 V 6 mA ECOPACK 2 compliant component Complies with UL standards (File ref: E81734) Insulated package TO-220FPAB: Insulated voltage: 2000 VRMS February 2015 DocID027546 Rev 1 1/9 This is information on a product in full production. www.st.com 9Characteristics TN1605H-6FP 1 Characteristics Table 2. Absolute ratings Symbol Parameter Value Unit I On-state rms current (180 conduction angle) T = 83 C 16 A T(RMS) c T = 83 C 10 c I Average on-state current (180 conduction angle) T = 102 C 8 A T(AV) c T = 117 C 6 c t = 8.3ms 153 Non repetitive surge peak on-state current I A TSM (T initial = 25 C) j t = 10 ms 140 ItI t value for fusing (T initial = 25 C) t = 10 ms 98 A s j p Critical rate of rise of on-state current dI/dt f = 60 Hz 100 A/s I = 2 x I , t 100 ns, T = 25 C G GT r j V , DRM Repetitive peak off-state voltage 600 V V RRM I Peak gate current t = 20 s T = 150 C 4 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 150 j T Maximum lead temperature for soldering during 10 s 260 C L V Insulation rms voltage, 1 minute TO-220FPAB 2000 V ins Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Value Unit Min. 3.5 I V = 12 V, R = 33 Typ. 4.5 mA GT D L Max. 6 V = 12 V, R = 33 V Max. 1.3 V D L GT V V = V , R = 3.3 k T = 150 C Min. 0.2 V GD D DRM L j I I = 500 mA, gate open Max. 20 mA H T I I = 1.2 x I Max. 40 mA L G GT dV/dt V = 402 V, gate open T = 150 C Min. 200 V/s D j I = 32 A, V = 600 V, I = 100 mA, T D G t Typ 1.9 s gt (dI /dt)max = 0.2 A/s G V = 402 V, V = 25 V, I = 16 A, D R T t T = 150 C Typ 70 s q j (dI /dt)max = 30A/s, dV /dt = 40 V/s G D 2/9 DocID027546 Rev 1