X-On Electronics has gained recognition as a prominent supplier of TT104N12KOF-A Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. TT104N12KOF-A Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

TT104N12KOF-A Infineon

TT104N12KOF-A electronic component of Infineon
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Part No.TT104N12KOF-A
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules PCT 1200V 104A
Datasheet: TT104N12KOF-A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the TT104N12KOF-A from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TT104N12KOF-A and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Technische Information / technical information Net z-Thyristor-Modul TT104N Phase Control Thyristor Module Key Parameters V / V 1400V DRM RRM ITAVM 102A (TC=85C) ITSM 2050A V 0,85V T0 rT 2,43m RthJC 0,35K/W Base plate 20mm For type designation please refer to actual short form catalog Technische Information / technical information Netz-Thyristor-Modul TT104N Phase Control Thyristor Module TT104N TT104N-K TD104N TT104N-A TD104N-A Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1200 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM 1400 V repetitive peak forward off-state and reverse voltages 1200 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM 1400 V non-repetitive peak forward off-state voltage 1300 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM 1500 V non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert I 160 A TRMSM maximum RMS on-state current Dauergrenzstrom I 102 A T = 85C TAVM C average on-state current Stostrom-Grenzwert T = 25C, t = 10ms I 2050 A vj P TSM 1800 surge current T = T , t = 10ms A vj vj max P Grenzlastintegral T = 25C, t = 10ms It 21000 As vj P It-value T = T , t = 10ms 16200 As vj vj max P Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 150 A/s T cr critical rate of rise of on-state current f = 50Hz, i = 0,6A, di /dt = GM G 0,6A/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) 1000 V/s vj vj max D DRM D cr th critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values 1,73 V Durchlaspannung T = T , i = 300 A v max. vj vj max T T on-state voltage max. 0,85 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 2,43 m Ersatzwiderstand T = T r vj vj max T slope resistance Zndstrom T = 25C, v = 12V I max. 120 mA vj D GT gate trigger current max. Zndspannung T = 25C, v = 12V V 1,4 V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12V I max. 5 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 2,5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V, R = 1 I max. 200 mA vj D A H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 620 mA vj D GK L latching current i = 0,6A, di /dt = 0,6A/s, t = GM G g 20s Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 50 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 3 s gd gate controlled delay time T = 25C, i = 0,6A, di /dt = vj GM G 0,6A/s prepared by: HR date of publication: 2020-05-29 approved by: ML revision: 3.3 Date of Publication 2020-05-29 Revision: 3.3 Seite/page 2/11

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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