Technische Information / technical information Net z-Thyristor-Modul TT104N Phase Control Thyristor Module Key Parameters V / V 1400V DRM RRM ITAVM 102A (TC=85C) ITSM 2050A V 0,85V T0 rT 2,43m RthJC 0,35K/W Base plate 20mm For type designation please refer to actual short form catalog Technische Information / technical information Netz-Thyristor-Modul TT104N Phase Control Thyristor Module TT104N TT104N-K TD104N TT104N-A TD104N-A Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1200 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM 1400 V repetitive peak forward off-state and reverse voltages 1200 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM 1400 V non-repetitive peak forward off-state voltage 1300 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM 1500 V non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert I 160 A TRMSM maximum RMS on-state current Dauergrenzstrom I 102 A T = 85C TAVM C average on-state current Stostrom-Grenzwert T = 25C, t = 10ms I 2050 A vj P TSM 1800 surge current T = T , t = 10ms A vj vj max P Grenzlastintegral T = 25C, t = 10ms It 21000 As vj P It-value T = T , t = 10ms 16200 As vj vj max P Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 150 A/s T cr critical rate of rise of on-state current f = 50Hz, i = 0,6A, di /dt = GM G 0,6A/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) 1000 V/s vj vj max D DRM D cr th critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values 1,73 V Durchlaspannung T = T , i = 300 A v max. vj vj max T T on-state voltage max. 0,85 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 2,43 m Ersatzwiderstand T = T r vj vj max T slope resistance Zndstrom T = 25C, v = 12V I max. 120 mA vj D GT gate trigger current max. Zndspannung T = 25C, v = 12V V 1,4 V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12V I max. 5 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 2,5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V, R = 1 I max. 200 mA vj D A H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 620 mA vj D GK L latching current i = 0,6A, di /dt = 0,6A/s, t = GM G g 20s Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 50 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 3 s gd gate controlled delay time T = 25C, i = 0,6A, di /dt = vj GM G 0,6A/s prepared by: HR date of publication: 2020-05-29 approved by: ML revision: 3.3 Date of Publication 2020-05-29 Revision: 3.3 Seite/page 2/11