TN2010H-6FP High temperature 20 A SCRs Datasheet - production data A Description Packaged in an insulated TO-220FPAB, this device offers high thermal performance during G operation of up to 20 ARMS, thanks to a junction K temperature of up to 150 C. This insulated fullpack package allows a back to back configuration. The combination of noise immunity and low gate G A triggering current allows to design strong and K compact control circuits. TO-220FPAB Table 1: Device summary Order code Package V /V I DRM RRM GT 10 mA TN2010H-6FP TO-220FPAB 600 V Features High junction temperature: Tj = 150 C High noise immunity dV/dt = 400 V/s up to 150 C Gate triggering current IGT = 10 mA Peak off-state voltage VDRM/VRRM = 600 V High turn-on current rise dI/dt = 100 A/s ECOPACK 2 compliant component TO-220FPAB insulated package: Complies with UL standards (File ref: E81734) Insulated voltage: 2000 V RMS Applications Motorbike voltage regulator circuits Inrush current limiting circuits Motor control circuits and starters Light dimmers Solid state relays August 2017 DocID030741 Rev 1 1/9 www.st.com This is information on a product in full production. Characteristics TN2010H-6FP 1 Characteristics Table 2: Absolute maximum ratings (limiting values), Tj = 25 C unless otherwise specified Symbol Parameter Value Unit RMS on-state current I T = 80 C 20 A T(RMS) c (180 conduction angle) T = 80 C 12.7 c Average on-state current IT(AV) Tc = 99 C 10 A (180 conduction angle) T = 112 C 8 c tp = 8.3 ms 197 Non repetitive surge peak on-state current I A TSM (Tj initial = 25 C) t = 10 ms 180 p 2 2 2 I t I t value for fusing tp = 10 ms 162 A s Critical rate of rise of on-state current dl/dt f = 60 Hz 100 A/s I = 2 x I , tr 100 ns G GT VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms 700 V I Peak gate current t = 20 s T = 150 C 4 A GM p j PG(AV) Average gate power dissipation Tj = 150 C 1 W T Storage junction temperature range -40 to +150 C stg Tj Operating junction temperature range -40 to +150 C T Maximum lead temperature for soldering during 10 s 260 C L VINS(RMS) Insulation RMS voltage, 60 seconds 2000 V Table 3: Electrical characteristics (Tj = 25 C unless otherwise specified) Symbol Test conditions Value Unit Typ. 5 IGT mA V = 12 V, R = 33 Max. 10 D L VGT Max. 1.3 V V V = V , R = 3.3 k T = 150 C Min. 0.1 V GD D DRM L j IH IT = 500 mA, gate open Max. 40 mA I I = 1.2 x I Max. 60 mA L G GT V/ dV/dt V = 402 V, gate open T = 150 C Min. 400 D j s t I = 40 A, V = 402 V, I = 20 mA, (dI /dt) max = 0.2 A/s Typ. 1.9 s gt TM D G G ITM = 40 A, VD = 402 V, (dI/dt)off = 30 A/s, t T = 150 C Typ. 70 s q j VR = 25 V, dVD/dt = 40 V/s 2/9 DocID030741 Rev 1