X-On Electronics has gained recognition as a prominent supplier of TN2540-12G-TR SCRs across the USA, India, Europe, Australia, and various other global locations. TN2540-12G-TR SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

TN2540-12G-TR STMicroelectronics

TN2540-12G-TR electronic component of STMicroelectronics
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Part No.TN2540-12G-TR
Manufacturer: STMicroelectronics
Category: SCRs
Description: SCRs 25 A 1200 V Standard SCR Thyristor in D2PAK
Datasheet: TN2540-12G-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.5664 ea
Line Total: USD 3.57 
Availability - 29
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
29
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 3.5664
10 : USD 3.1104
30 : USD 2.6277
100 : USD 2.3357
500 : USD 2.204
1000 : USD 2.1468

   
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State RMS Current - It RMS
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Package / Case
Packaging
Series
Minimum Operating Temperature
Maximum Operating Temperature
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN2540-12G-TR from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN2540-12G-TR and other electronic components in the SCRs category and beyond.

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TN2540-12G Datasheet Standard SCR, DPAK, 25 A, 1200 V Features A Max. blocking voltage = V , V = 1200 V DRM RRM I maximum = 40 mA GT High static and dynamic commutation at T = 125 C G j dl/dt = 50 A/s K dV/dt = 1500 V/s A ECOPACK 2 compliant (RoHS and HF compliance) Applications A G Solar DPAK K Wind renewable energy inverters Solid State Relay (SSR) Uninterruptible Power Supply (UPS) AC DC Inrush Current Limiter (ICL) Battery charger AC DC voltage controlled rectifier Industrial welding systems Off board automotive battery charger Soft starter General purpose motor control Product status link TN2540-12G Description Available in SMD DPAK with anode in backside. Product summary The TN2540-12G SCR is suitable in industrial applications where high immunity is I 25 A T(RMS) required with a lower gate current. V , V 1200 V DRM RRM I 40 mA GT T 125 C j DS12791 - Rev 1 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.TN2540-12G Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), T = 25 C unless otherwise specified j Symbol Parameter Value Unit V /V T = 125 C Repetitive peak off-state voltage (50-60 Hz) 1200 V DRM RRM j I On-state RMS current (180 conduction angle) 25 T(RMS) T = 102 C A c I Average on-state current (180 conduction angle) 16 T(AV) t = 8.3 ms 314 p I Non repetitive surge peak on-state current A TSM t = 10 ms 300 p 2 2 2 t = 10 ms I t I t value for fusing 450 A s p I = 2 x I , tr 100 ns G GT dl/dt f = 60 Hz 50 A/s Critical rate of rise of on-state current I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test conditions Value Unit Min. 4 I mA GT V = 12 V, R = 33 Max. 40 D L V Max. 1.3 V GT V V = V , R = 3.3 k T = 125 C Min. 0.2 V GD D DRM L j I I = 500 mA, gate open Max. 80 mA H T I I = 1.2 x I Max. 90 mA L G GT dV/dt V = 67 % V , gate open T = 125 C Min. 1500 V/s D DRM j Table 3. Static electrical characteristics Symbol Test conditions Value Unit V I = 50 A, t = 380 s T = 25 C Max. 1.60 TM TM p j V V Threshold voltage T = 125 C Max. 0.85 TO j R Dynamic resistance T = 125 C Max. 14 m D j T = 25 C 10 A j I , I V = 1200 V Max. DRM RRM OUT T = 125 C 6 mA j DS12791 - Rev 1 page 2/10

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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