TN3015H-6G STMicroelectronics

TN3015H-6G Datasheet 2 High temperature 30 A, 600 V D PAK thyristor SCRs A Features High junction temperature: T = 150 C j High noise immunity dV/dt = 1000 V/s up to 150 C G Gate triggering current I = 15 mA GT K Peak off-state voltage V /V = 600 V DRM RRM A High turn-on current rise dI/dt = 100 A/s ECOPACK2 compliant Applications A K General purpose AC line load switching G Motorbike voltage regulator circuits DPAK Inrush current limiting circuits Motor control circuits and starters Heating resistor control, Solid State Relays Lighting Description Thanks to its operating junction temperature up to 150C, the TN3015H-6G SCR in 2 D PAK package offers high thermal performance operation up to 30 A RMS in a compact SMD design. Product status Its trade-off noise immunity (dV/dt = 1000 V/s) versus its gate triggering current TN3015H-6G (I = 15 mA) and its turn-on current rise (dI/dt = 100 A/s) allows to design robust GT and compact control circuit for voltage regulator in motorbikes and industrial drives, Product summary overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances and inrush current limiting circuits. Order code TN3015H-6G 2 Package D PAK V /V 600 V DRM RRM T j 150 C I 15 mA GT DS13026 - Rev 1 - July 2019 www.st.com For further information contact your local STMicroelectronics sales office.TN3015H-6G Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I T = 127 C RMS on-state current (180 conduction angle) 30 A T(RMS) c T = 127 C 19 c I T = 134 C Average on-state current (180 conduction angle) 15 A T(AV) c T = 141 C 10 c t = 8.3 ms 295 p I Non repetitive surge peak on-state current (T initial = 25 C) A TSM j t = 10 ms 270 p 2 2 2 t = 10 ms I t value for fusing (T initial = 25 C) 364 I t p A s j I = 2 x I , tr 100 ns G GT dl/dt f = 60 Hz T = 25 C 100 A/s j Critical rate of rise of on-state current V /V Repetitive peak off-state voltage 600 V DRM RRM V /V t = 10 ms T = 25 C V /V +100 Non repetitive surge peak off-state voltage V DSM RSM p j DRM RRM I t = 20 s T = 150 C Peak gate current 4 A GM p j P T = 150 C Average gate power dissipation 1 W G(AV) j V Maximum peak reverse gate voltage T = 25 C 5 V RGM j T Storage junction temperature range -40 to +150 C stg T Maximum operating junction temperature -40 to +150 C j Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test conditions Value Unit Min. 6 I mA GT V = 12 V, R = 33 Max. 15 D L V Max. 1.3 V GT V V = V , R = 3.3 k T = 150 C Min. 0.15 V GD D DRM L j I I = 500 mA, gate open Max. 60 mA H T I I = 1.2 x I Max. 75 mA L G GT dV/dt V = 402 V, gate open T = 150 C Min. 1000 V/s D j t I = 60 A, V = 600 V, I = 100 mA, (dI /dt) max = 0.2 A/s Typ. 1.9 s gt T D G G t I = 30 A, V = 402 V,(di/dt)off = 30 A/s, V = 25 V, dV /dt = 50 V/s T = 150 C Typ. 80 s q T D R D j DS13026 - Rev 1 page 2/11