TN4015H-6T Datasheet 40 A 600 V 150 C junction temperature SCR in TO-220AB package A2 Features High junction temperature : T = 150 C j High noise immunity dV/dt = 500 V/s up to 150 C G Gate triggering current I = 15 mA GT A1 Off-state voltage 600 V V /V DRM RRM A2 High turn on current rise dI/dt = 100 A/s ECOPACK2 compliant component G Applications A2 A1 TO-220AB Motorbike voltage regulator circuits Inrush current limiting circuit Motor control circuits and starters Solid state relays Description The TN4015H-6T in non-isolated TO-220AB package offers high thermal performances up to 40 A, thanks to its junction temperature up to 150C. Its trade-off noise immunity (dV/dt = 500 V/s) versus its gate triggering current (I = 15 mA) and its turn-on current rise (dI/dt = 100 A/s) allows to design robust GT and compact control circuit for voltage regulator in motorbikes and industrial drives, Product status link overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits. TN4015H-6T Product summary I 40 A T(RMS) V /V 600 V DRM RRM V /V 800 V DSM RSM I 15 mA GT Package TO-220AB DS11764 - Rev 2 - December 2021 www.st.com For further information contact your local STMicroelectronics sales office.TN4015H-6T TN4015H-6T Characteristics 1 TN4015H-6T Characteristics Table 1. Absolute maximum ratings (limiting values), T = 25 C unless otherwise specified j Symbol Parameter Value Unit I T = 119 C RMS on-state current (180 conduction angle) 40 A T(RMS) c T = 120 C 25 c I T = 125 C Average on-state current (180 conduction angle) 22 A T(AV) c T = 128 C 20 c t = 8.3 ms 394 p I Non repetitive surge peak on-state current A TSM t = 10 ms 360 p 2 2 2 t = 10 ms I t I t value for fusing 648 A s p Critical rate of rise of on-state current dl/dt f = 60 Hz 100 A/s I = 2 x I , tr 100 ns G GT V /V T = 150 C Repetitive peak off-state voltage 600 V DRM RRM j V /V t = 10 ms Non repetitive surge peak off-state voltage 800 V DSM RSM p I t = 20 s T = 150 C Peak gate current 4 A GM p j P T = 150 C Average gate power dissipation 1 W G(AV) j V Maximum peak reverse gate voltage 5 V RGM T Storage junction temperature range -40 to +150 C stg T Maximum operating junction temperature -40 to +150 C j T Maximum lead temperature soldering during 10 s 260 C L Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test Conditions Value Unit I Max. 15 mA GT V = 12 V, R = 33 D L V Max. 1.3 V GT V V = V , R = 3.3 k T = 150 C Min. 0.15 V GD D DRM L j I I = 500 mA, gate open Max. 60 mA H T I I = 1.2 x I Max. 80 mA L G GT dV/dt V = 402 V, gate open T = 150 C Min. 500 V/s D j t I = 80 A, V = 600 V, I = 100 mA, (dI /dt) max = 0.2 A/s Typ. 1.9 s gt T D G G V = 402 V, I = 40 A, V = 25 V, dV /dt = 50 V/s, D T R D t T = 150 C Typ. 85 s q j (dI /dt)max = 30 A/s G DS11764 - Rev 2 page 2/10