TN5015H-6G High temperature 50 A SCRs Datasheet - production data A Description Thanks to its junction temperature Tj up to 150 C, the device offers high thermal G performance operation up to 50 A. Its DPAK K package allows modern SMD designs as well as A compact back to back configuration. Its trade-off noise immunity (dV/dt = 500 V/s) versus its gate triggering current (IGT = 15 mA) A and its turn-on current rise (dI/dt = 100 A/s) K allow to design robust and compact control circuit G for voltage regulator in motorbikes and industrial DPAK drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances, inrush current limiting circuits. Features Table 1: Device summary High junction temperature: T = 150 C j Order code Package V /V I DRM RRM GT High noise immunity dV/dt = 500 V/s up to 150 C 15 mA TN5015H-6G DPAK 600 V Gate triggering current I = 15 mA GT Peak off-state voltage VDRM/VRRM = 600 V High turn-on current rise dI/dt = 100 A/s ECOPACK 2 compliant component Applications Motorbike voltage regulator circuits Inrush current limiting circuits Motor control circuits and starters Solid state relays June 2017 DocID030697 Rev 1 1/9 www.st.com This is information on a product in full production. Characteristics TN5015H-6G 1 Characteristics Table 2: Absolute maximum ratings (limiting values), Tj = 25 C unless otherwise specified Symbol Parameter Value Unit RMS on-state current I T = 120 C 50 A T(RMS) c (180 conduction angle) T = 122 C 30 c Average on-state current IT(AV) Tc = 128 C 25 A (180 conduction angle) T = 134 C 20 c tp = 8.3 ms 493 I Non repetitive surge peak on-state current A TSM t = 10 ms 450 p 2 2 2 I t I t value for fusing tp = 10 ms 1012 A s Critical rate of rise of on-state current dl/dt f = 60 Hz 100 A/s I = 2 x I , tr 100 ns G GT VDRM/VRRM Repetitive peak off-state voltage Tj = 150 C 600 V V /V + DRM RRM VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms V 100 IGM Peak gate current tp = 20 s Tj = 150 C 4 A P Average gate power dissipation T = 150 C 1 W G(AV) j VRGM Maximum peak reverse gate voltage 5 V T Storage junction temperature range -40 to +150 C stg Tj Maximum operating junction temperature -40 to +150 C Table 3: Electrical characteristics (Tj = 25 C unless otherwise specified) Symbol Test conditions Value Unit IGT Max. 15 mA VD = 12 V, RL = 33 V Max. 1.3 V GT VGD VD = VDRM, RL = 3.3 k Tj = 150 C Min. 0.15 V I I = 500 mA, gate open Max. 60 mA H T IL IG = 1.2 x IGT Max. 80 mA dV/dt V = 402 V, gate open T = 150 C Min. 500 V/s D j tgt ITM = 100 A, VD = 600 V, IG = 100 mA, (dIG/dt) max = 0.2 A/s Typ. 1.9 s I = 100 A, V = 402 V, TM D t (d /dt)off = 30 A/s, V = 25 V, T = 150 C Typ. 85 s q I R j dV /dt = 50 V/s D 2/9 DocID030697 Rev 1