TN4015H-6I High temperature 40 A SCRs Datasheet - production data Applications Motorbike voltage regulator circuits Inrush current limiting circuit Motor control circuits and starters Solid state relays Description Thanks to its junction temperature Tj up to 150 C, the device offers high thermal performances operation up to 40 A. It is fully tab insulated thanks to the ceramic inside the TO-220AB package and allows a back to back configuration. Its trade-off noise immunity (dV/dt = 500 V/s) Features versus its gate triggering current (IGT = 15 mA) High junction temperature: T = 150 C j and its turn-on current rise (dI/dt = 100 A/s) High noise immunity dV/dt = 500 V/s up to allows to design robust and compact control 150 C circuit for voltage regulator in motorbikes and Gate triggering current I = 15 mA GT industrial drives, overvoltage crowbar protection, Peak off-sate voltage 600 V V /V DRM RRM motor control circuits in power tools and kitchen High turn on current rise dI/dt = 100 A/s aids, inrush current limiting circuits. ECOPACK 2 compliant component Table 1: Device summary Insulated package TO-220AB: Order code Package VDRM/VRRM IGT Insulated voltage: 2500 V RMS Complies with UL 1557 (File ref : E81734) TN4015H-6I TO-220AB ins. 600 V 15 mA November 2016 DocID029569 Rev 2 1/9 www.st.com This is information on a product in full production. Characteristics TN4015H-6I 1 Characteristics Table 2: Absolute maximum ratings (limiting values), Tj = 25 C unless otherwise specified Symbol Parameter Value Unit RMS on-state current I T = 82 C 40 A T(RMS) c (180 conduction angle) T = 83 C 25 c Average on-state current IT(AV) Tc = 94 C 22 A (180 conduction angle) T = 101 C 20 c tp = 8.3 ms 394 I Non repetitive surge peak on-state current A TSM t = 10 ms 360 p 2 2 2 I t I t value for fusing tp = 10 ms 648 A s Critical rate of rise of on-state current dl/dt f = 60 Hz 100 A/s I = 2 x I , tr 100 ns G GT VDRM/VRRM Repetitive peak off-state voltage Tj = 150 C 600 V V /V + DRM RRM VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms V 100 IGM Peak gate current tp = 20 s Tj = 150 C 4 A P Average gate power dissipation T = 150 C 1 W G(AV) j VRGM Maximum peak reverse gate voltage 5 V T Storage junction temperature range -40 to +150 C stg Tj Maximum operating junction temperature -40 to +150 C T Maximum lead temperature soldering during 10 s 260 C L Table 3: Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test Conditions Value Unit I Max. 15 mA GT V = 12 V, R = 33 D L VGT Max. 1.3 V V V = V , R = 3.3 k T = 150 C Min. 0.15 V GD D DRM L j IH IT = 500 mA, gate open Max. 60 mA I I = 1.2 x I Max. 80 mA L G GT dV/dt VD = 402 V, gate open Tj = 150 C Min. 500 V/s t I = 80 A, V = 600 V, I = 100 mA, (dI /dt) max = 0.2 A/s Typ. 1.9 s gt T D G G VD = 402 V, IT = 40 A, VR = 25 V, t T = 150 C Typ. 85 s q j dVD/dt = 50 V/s, (dIG/dt) max = 30 A/s 2/9 DocID029569 Rev 2