th Date:- 30 April, 2015 Data Sheet Issue:- 3 Phase Control Thyristor Types N1075LN180 Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS V Repetitive peak off-state voltage, (note 1) 1800 V DRM V Non-repetitive peak off-state voltage, (note 1) 1900 V DSM V Repetitive peak reverse voltage, (note 1) 1800 V RRM V Non-repetitive peak reverse voltage, (note 1) 1900 V RSM MAXIMUM OTHER RATINGS UNITS LIMITS I Maximum average on-state current, T =55C, (note 2) 1240 A T(AV)M sink I Maximum average on-state current. T =85C, (note 2) 880 A T(AV)M sink I Maximum average on-state current. T =85C, (note 3) 535 A T(AV)M sink I Nominal RMS on-state current, T =25C, (note 2) 2415 A T(RMS)M sink I D.C. on-state current, T =25C, (note 4) 2095 A T(d.c.) sink I Peak non-repetitive surge t =10ms, V =60%V , (note 5) 15750 A TSM p rm RRM I 17500 A Peak non-repetitive surge t =10ms, V 10V, (note 5) TSM2 p rm 2 2 6 2 It I t capacity for fusing t =10ms, V =60%V , (note 5) 1.2410 A s p rm RRM 2 2 6 2 I t 1.5310 A s I t capacity for fusing t =10ms, V 10V, (note 5) p rm (continuous, 50Hz) 200 (di/dt) Critical rate of rise of on-state current (note 6) A/s cr (non-repetitive) 400 V Peak reverse gate voltage 5 V RGM P Mean forward gate power 3 W G(AV) P Peak forward gate power 30 W GM T Operating temperature range -60 to +130 C j op T Storage temperature range -60 to +130 C stg Notes:- 1) De-rating factor of 0.13% per C is applicable for T below 25C. j 2) Double side cooled, single phase 50Hz, 180 half-sinewave. 3) Single side cooled, single phase 50Hz, 180 half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125C T initial. j 6) V =67% V , I =1600A, I =2A, t 0.5s, T =130C. D DRM TM FG r case Data Sheet. Types N1075LN180 Issue 3 Page 1 of 11 April, 2015 Phase Control Thyristor Types N1075LN180 Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS V Maximum peak on-state voltage - - 1.40 I=1700A V TM TM V Maximum peak on-state voltage - - 2.02 I=3700A V TM TM V Threshold voltage - - 0.85 V T0 r Slope resistance - - 0.32 m T (dv/dt) Critical rate of rise of off-state voltage 1000 - - V =67% V , linear ramp, gate o/c V/s cr D DRM I Peak off-state current - - 100 Rated V mA DRM DRM I Peak reverse current - - 100 Rated V mA RRM RRM V Gate trigger voltage - - 2.5 V GT T=25C V =10V, I =3A j D T I Gate trigger current - - 250 mA GT V Gate non-trigger voltage - - 0.25 Rated V V GD DRM I Holding current - - 300 T=25C mA H j V =67% V , I =800A, di/dt=10A/s, D DRM T t Gate-controlled turn-on delay time - - 2.0 s gd I =2A, t =0.5s, T =25C FG r j Q Recovered charge - 1230 1400 C rr Q Recovered charge, 50% Chord - 950 - C ra I =1000A, t =1000s, di/dt=10A/s, TM p V =100V r I Reverse recovery current - 125 - A rr t Reverse recovery time - 15 - s rr I =1000A, t =1000s, di/dt=10A/s, TM p - 120 230 s V =100V, V =67%V , dV /dt=20V/s r dr DRM dr t Turn-off time q I =1000A, t =1000s, di/dt=10A/s, TM p - 180 330 s V =100V, V =67%V , dV /dt=200V/s r dr DRM dr - - 0.033 Double side cooled K/W R Thermal resistance, junction to heatsink thJK - - 0.066 Single side cooled K/W F Mounting force 14 - 16 Note 2. kN WWeight - 280 - g t Notes:- 1) Unless otherwise indicated T =130C. j 2) For other clamp forces, please consult factory. Data Sheet. Types N1075LN180 Issue 3 Page 2 of 11 April, 2015