th Date:- 6 December, 2012 Data Sheet Issue:- A1 Phase Control Thyristor Types N0795YN100 to N0795YN180 Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS V DRM Repetitive peak off-state voltage, (note 1) 1000-1800 V V DSM Non-repetitive peak off-state voltage, (note 1) 1100-1900 V V RRM Repetitive peak reverse voltage, (note 1) 1000-1800 V V RSM Non-repetitive peak reverse voltage, (note 1) 1100-1900 V MAXIMUM OTHER RATINGS UNITS LIMITS I Maximum average on-state current, T =55C, (note 2) 795 A T(AV)M sink I Maximum average on-state current. T =85C, (note 2) 540 A T(AV)M sink I Maximum average on-state current. T =85C, (note 3) 300 A T(AV)M sink I Nominal RMS on-state current, T =25C, (note 2) 1580 A T(RMS)M sink I D.C. on-state current, T =25C, (note 4) 1340 A T(d.c.) sink I Peak non-repetitive surge t =10ms, V =60%V , (note 5) 9450 A TSM p rm RRM I Peak non-repetitive surge t =10ms, V 10V, (note 5) 10500 A TSM2 p rm 2 2 3 2 I t I t capacity for fusing t =10ms, V =60%V , (note 5) 44410 A s p rm RRM 2 2 3 2 I t I t capacity for fusing t =10ms, V 10V, (note 5) 55110 A s p rm (continuous, 50Hz) 250 (di/dt) Critical rate of rise of on-state current (note 6) (repetitive, 50Hz, 60s) 500 A/s cr (non-repetitive) 1000 V Peak reverse gate voltage 5 V RGM P Mean forward gate power 3 W G(AV) P Peak forward gate power 30 W GM T Operating temperature range -60 to +125 C j op T Storage temperature range -60 to +125 C stg Notes:- 1) De-rating factor of 0.13% per C is applicable for T below 25C. j 2) Double side cooled, single phase 50Hz, 180 half-sinewave. 3) Anode side cooled, single phase 50Hz, 180 half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125C T initial. j 6) V =67% V , I =1000A, I =2A, t0.5s, T =125C. D DRM TM FG r case Data Sheet. Types N0795YN100 to N0795YN180 Issue A1 Page 1 of 12 December, 2012 Phase Control Thyristor Types N0795YN100 to N0795YN180 Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS V Maximum peak on-state voltage - - 1.30 I =785A V TM TM V Maximum peak on-state voltage - - 2.00 I =2350A V TM TM V Threshold voltage - - 0.95 V T0 r Slope resistance - - 0.45 mW T (dv/dt) Critical rate of rise of off-state voltage 1000 - - V =67% V , linear ramp, gate o/c cr D DRM V/s I Peak off-state current - - 30 Rated V mA DRM DRM I Peak reverse current - - 30 Rated V mA RRM RRM V Gate trigger voltage - - 2.50 V GT T =25C V =10V, I =3A j D T I Gate trigger current - - 150 mA GT V Gate non-trigger voltage - - 0.25 Rated V V GD DRM I Holding current - - 300 T =25C mA H j V =67% V , I =2000A, di/dt=10A/s, D DRM T t Gate-controlled turn-on delay time - - 2.0 s gd I =2A, t =0.5s, T =25C FG r j Q Recovered charge - - 850 C rr Q Recovered charge, 50% Chord - - 750 C ra I =500A, t =500s, di/dt=10A/s, TM p V =100V r I Reverse recovery current - - 100 A rr t Reverse recovery time - - 15 s rr I =500A, t =500s, di/dt=10A/s, V =50V, TM p r t Turn-off time - - 125 s q V =67%V , dV /dt=50V/s dr DRM dr - - 0.048 Double side cooled K/W R Thermal resistance, junction to heatsink - - 0.104 Anode side cooled thJK - - 0.088 Cathode side cooled K/W F Mounting force 9.0 - 11.0 Note 2. kN W Weight - 110 - g t Notes:- 1) Unless otherwise indicated T =125C. j 2) For other clamp forces, please consult factory. Data Sheet. Types N0795YN100 to N0795YN180 Issue A1 Page 2 of 12 December, 2012