TN3050H-12GY-TR Datasheet 30 A 1200 V automotive grade SCR Thyristor A Features AEC-Q101 qualified G High junction temperature: T = 150 C j K AC off state voltage: +/- 1200 V A Nominal on-state current: 30 A RMS High noise immunity: 1000 V/s Max. gate triggering current: 50 mA ECOPACK 2 compliant component G A K DPAK Applications Automotive applications: on board and off board battery charger Renewable energy inverters Solid state relay 3-Phase heating or motor soft start control UPS (uninterruptible power supply) Bypass SSR / hybrid relay Inrush current limiter in battery charger AC-DC voltage controlled rectifier Industrial welding systems Product status link TN3050H-12GY-TR Description Product summary The TN3050H-12GY-TR is an automotive grade SCR Thyristor designed for applications such as automotive on-board chargers, AC solid state relays and I 30 A T(RMS) stationary battery chargers. V /V 1200 V DRM RRM Rated for a 30 A power switching, This SCR Thyristor offers superior RMS performance in terms of peak voltage robustness (up to 1400 V) and surge current V /V 1400 V DSM RSM handling (sine wave pulse up to 300 A). Its key features allow the design of functions I 50 mA GT such as a 42 A AC switch (dual back-to-back SCRs) and a 38 A average AC-DC RMS controlled rectifier bridge for inrush current limitation. T 150 C j Available in DPAK package, it is ideal for compact SMD designs on surface mount boards or insulated metal substrate boards. DS11813 - Rev 3 - September 2019 www.st.com For further information contact your local STMicroelectronics sales office.TN3050H-12GY-TR Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit I RMS on-state current (180 conduction angle) 30 A T(RMS) T = 126 C C I Average on-state current (180 conduction angle) 19 A T(AV) t = 8.3 ms 330 p Non repetitive surge peak on-state current, (1) I T initial = 25 C A j TSM V = 0 V R t = 10 ms 300 p V / V Repetitive off-state voltage (50-60 Hz) T = 150 C 1200 V DRM RRM j Critical rate of rise of on-state current T = 150 C dl/dt f = 50 Hz 200 A/s j I = 2 x I , tr 100 ns G GT V Peak forward gate voltage 10 V GM t = 20 s T = 150 C p j I Peak forward gate current 8 A GM P Average gate power dissipation T = 150 C 1 W G(AV) j V Peak reverse gate voltage T = 25 C 5 V RGM j T stg Storage junction temperature range -40 to +150 C T Operating junction temperature -40 to +150 C j 1. ST recommend It value for fusing = 450 As for T = 25 C and t = 10 ms j P Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test conditions Value Unit Min. 10 I V = 12 V, R = 33 GT D L mA Max. 50 V V = 12 V, R = 33 Max. 1.3 V GT D L V V = 2/3 x V , R = 3.3 k T = 150 C Min. 0.2 V GD D DRM L j I I = 500 mA, gate open Max. 100 mA H T I I = 1.2 x I Max. 125 mA L G GT t I = 60 A , V = 2/3 x V , I = 100 mA, dI /dt = 0.2 A/s Typ. 1 s gt T D DRM G G V = 2/3 x V , gate open T = 150 C dV/dt Min. 1000 V/s D DRM j I = 20 A, dI /dt = 10 A/s, V = 75 V, V = T T R D t T = 150 C Typ. 150 s q j 2/3 x V , dV /dt = 20 V/s, t = 100 s DRM D P V I = 60 A, t = 380 s Max. 1.65 V TM TM P V T = 150 C Threshold voltage Max. 0.88 V TO j R T = 150 C Dynamic resistance Max. 14 m D j T = 25 C Max. 5 A j I /I V = V , V = V T = 125 C Max. 3 mA DRM RRM D DRM R RRM j T = 150 C Max. 5 mA j I /I V = V , V = V T = 25 C DSM RSM D DSM R RSM j Max. 10 A DS11813 - Rev 3 page 2/11