X-On Electronics has gained recognition as a prominent supplier of TN1625-600G-TR SCRs across the USA, India, Europe, Australia, and various other global locations. TN1625-600G-TR SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

TN1625-600G-TR STMicroelectronics

TN1625-600G-TR electronic component of STMicroelectronics
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Part No.TN1625-600G-TR
Manufacturer: STMicroelectronics
Category: SCRs
Description: STMicroelectronics SCRs 16A SCRS
Datasheet: TN1625-600G-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.3401 ea
Line Total: USD 1.34 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 0.5401
2000 : USD 0.518
5000 : USD 0.5061
6000 : USD 0.4967
10000 : USD 0.4787

0
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ : 1
Multiples : 1
1 : USD 4.6627
10 : USD 1.6946
25 : USD 1.6044
100 : USD 1.3838
500 : USD 1.1732
1000 : USD 1.0228

0
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ : 1
Multiples : 1
1 : USD 1.3401
5 : USD 1.0774
20 : USD 0.7883
54 : USD 0.7358

0
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 0.8534

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Current Rating
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN1625-600G-TR from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN1625-600G-TR and other electronic components in the SCRs category and beyond.

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TN1625 TYN616, TYN816 16 A standard SCRs Features A I =16 A T(RMS) G V /V = 600 to 1000 V DRM RRM K I = 25 mA GT Description A A The standard TN16 / TYNx16 16 A SCRs series is suitable for general purpose applications. Using clip assembly technology, they provide a K A K superior performance in surge current A G G capabilities. 2 D PAK TO-220AB (TN1625-x00G) (TYNx16RG) Table 1. Device summary TN1625-600G TN1625-1000G Parameter Unit TYN616RG TYN816RG V /V 600 800 1000 V DRM RRM Sensitivity 25 25 25 mA November 2007 Rev 6 1/9 www.st.com 9Characteristics TN1625, TYN616, TYN816 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit I RMS on-state current (180 Conduction angle) T = 110 C 16 A T(RMS) c I Average on-state current (180 Conduction angle) T = 110 C 10 A T(AV) c t = 8.3 ms 200 p I Non repetitive surge peak on-state current T = 25 C A TSM j t = 10 ms 190 p 2 2 2 ItI t Value for fusing t = 10 ms T = 25 C 180 A S p j Critical rate of rise of on-state current dI/dt F = 60 Hz T = 125 C 50 A/s j I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j V Maximum peak reverse gate voltage 5 V RGM Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test Conditions Value Unit MIN. 2 I mA GT V = 12 V R = 33 MAX. 25 D L V MAX. 1.3 V GT V V = V R = 3.3 k T = 125 C MIN. 0.2 V GD D DRM L j I I = 500 mA Gate open MAX. 40 mA H T I I = 1.2 x I MAX. 60 mA L G GT dV/dt V = 67 % V Gate open T = 125 C MIN. 500 V/s D DRM j V I = 32 A t = 380 s T = 25 C MAX. 1.6 V TM TM p j V Threshold voltage T = 125 C MAX. 0.77 V t0 j R Dynamic resistance T = 125 C MAX. 23 m d j T = 25 C 5A I j DRM V = V MAX. DRM RRM I T = 125 C 2 mA RRM j Table 4. Thermal resistance Symbol Parameter Value Unit R Junction to case (DC) 1.1 C/W th(j-c) 2 2 S = 01 cm D PAK 45 R Junction to ambient (DC) C/W th(j-a) TO-220AB 60 S = copper surface under tab 2/9

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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