X-On Electronics has gained recognition as a prominent supplier of TN2015H-6T SCRs across the USA, India, Europe, Australia, and various other global locations. TN2015H-6T SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

TN2015H-6T STMicroelectronics

TN2015H-6T electronic component of STMicroelectronics
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Part No.TN2015H-6T
Manufacturer: STMicroelectronics
Category: SCRs
Description: STMicroelectronics SCRs
Datasheet: TN2015H-6T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
15: USD 0.467 ea
Line Total: USD 7.01 
Availability - 0
MOQ: 15  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 2000
Multiples : 1000
2000 : USD 0.7077
3000 : USD 0.7007
4000 : USD 0.6937
5000 : USD 0.6866
6000 : USD 0.6799
10000 : USD 0.674
20000 : USD 0.6673
25000 : USD 0.6607
50000 : USD 0.654

0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 2.916
10 : USD 1.0935
25 : USD 0.9958
100 : USD 0.8186
500 : USD 0.6761
1000 : USD 0.5357

0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 1.2348
3 : USD 1.1127
10 : USD 0.9905
20 : USD 0.8141
54 : USD 0.7599

0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 15
Multiples : 1
15 : USD 0.467
25 : USD 0.4464
100 : USD 0.4374

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
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We are delighted to provide the TN2015H-6T from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN2015H-6T and other electronic components in the SCRs category and beyond.

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TN2015H-6T High temperature 20 A SCRs Datasheet production data Description Thanks to a junction temperature T up to 150 C j and a non-isolated TO-220 package, the TN2015H-6T offers high thermal performance up to 20 A rms. The trade-off between the devices noise * immunity (dV/dt = 750 V/s), its gate triggering current (I = 15 mA) and its turn-on current rise GT . (dI/dt = 100 A/s) allows the design of robust and compact control circuits for voltage regulators in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances, and inrush current limiting circuits. Table 1. Device summary . * Order code Package V /V I DRM RRM GT TN2015H-6T TO-220AB 600 V 15 mA 2 % 7 Features High junction temperature: T = 150 C j High noise immunity dV/dt = 750 V/s up to 150 C Gate triggering current I = 15 mA GT Blocking voltage V /V = 600 V DRM RRM High turn on current rise dI/dt: 100 A/s ECOPACK 2 compliant component Applications Voltage regulator circuits for motorbikes Inrush current limiting circuits Motor control circuits and starters Light dimmers Solid state relays February 2015 DocID027463 Rev 1 1/9 This is information on a product in full production. www.st.com 9Characteristics TN2015H-6T 1 Characteristics Table 2. Absolute ratings Symbol Parameter Value Unit I On-state rms current (180 conduction angle) T = 132 C 20 A T(RMS) c T = 132 C 12.7 c I Average on-state current (180 conduction angle) T = 137 C 10 A T(AV) c T = 140 C 8 c t = 8.3 ms 197 Non repetitive surge peak on-state current I A TSM (T initial = 25 C) j t = 10 ms 180 ItI t value for fusing (T initial = 25 C) t = 10 ms 162 A s j p Critical rate of rise of on-state current dI/dt F = 60 Hz 100 A/s I = 2 x I , t 100 ns, T = 25 C G GT r j V , DRM Repetitive peak off-state voltage 600 V V RRM I Peak gate current t = 20 s T = 150 C 4 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 150 j T Maximum lead temperature for soldering during 10 s 260 C L Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Value Unit Typ. 6 I V = 12 V, R = 33 mA GT D L Max. 15 V = 12 V, R = 33 V Max. 1.3 V D L GT V V = V , R = 3.3 k T = 150 C Min. 0.2 V GD D DRM L j I I = 500 mA, gate open Max. 50 mA H T I I = 1.2 x I Max. 60 mA L G GT dV/dt V = 402 V, gate open T = 150 C Min. 750 V/s D j I = 40 A, V = 600 V, I = 100 mA, T D G t Typ 1.9 s gt (dI /dt)max = 0.2 A/s G V = 402 V, V = 25 V, I = 20 A, D R T t T = 150 C Typ 70 s q j (dI /dt)max = 30A/s, dV /dt = 50 V/s G D 2/9 DocID027463 Rev 1

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
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ST2
ST7
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