IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) NXP Semiconductors N.V. {year}. All rights reserved becomes WeEn
Semiconductors Co., Ltd. {year}. All rights reserved
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn SemiconductorsMCR08BT1
SCR
23 July 2014 Product data sheet
1. General description
Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic
package. This SCR is designed to be interfaced directly to microcontrollers, logic
integrated circuits and other low power gate trigger circuits.
2. Features and benefits
Sensitive gate
Planar passivated for voltage ruggedness and reliability
Direct triggering from low power drivers and logic ICs
Surface mountable package
3. Applications
General purpose switching and phase control
Ignition circuits, CDI for 2- and 3-wheelers
Motor control - e.g. small kitchen appliances
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V repetitive peak off- - - 200 V
DRM
state voltage
V repetitive peak reverse - - 200 V
RRM
voltage
I non-repetitive peak on- half sine wave; T = 25 C; - - 8 A
TSM j(init)
state current
t = 10 ms; Fig. 4; Fig. 5
p
I average on-state half sine wave; T 112 C; Fig. 1 - - 0.5 A
T(AV) sp
current
I RMS on-state current half sine wave; T 112 C; Fig. 2; - - 0.8 A
T(RMS) sp
Fig. 3
Static characteristics
I gate trigger current V = 12 V; I = 10 mA; T = 25 C; - 50 200 A
GT D T j
Fig. 9
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SOT223