S8X5ECSRP Littelfuse

Thyristors EV Series 0.8 Amp Sensitive SCRs S8X5ECSx RoHS Description The S8X5ECSx offers a high static dv/dt with a low turn off (tq) time. It is specifically designed for GFCI (Ground Fault Circuit Interrupter) and AFCI (Arc Fault Circuit Interrupter), RCD (Residual Current Device) and RCBO (Residual Current Circuit Breaker with Overload Protection) applications. All SCR junctions are glass-passivated to ensure long term reliability and parametric stability. Main Features Features T hru-hole packages Non-repetitive reverse Symbol Value Unit surge peak off-state Surge current I 0.5 A voltage (V ) up to 900V T(RMS) capability < 20Amps RSM V /V 800 V DRM RRM High dv/dt noise immunity Blocking voltage V (t = 50 s) 1250 V DSM p ( V / V ) Impro ved turn-off time (t ) DRM RRM q V (t = 50 s) 900 V capability - up to 800V RSM p Sensitive gate for direct I 20 to 100 A GT Non-repetitive direct surge microprocessor interface peak off-state voltage Halogen free and R oHS (V ) up to 1250V compliant DSM Schematic Symbol A G * TO92 withGA pin output K Absolute Maximum Ratings Symbol Parameter Value Unit I RMS on-state current (full sine wave) T = 85C 0.5 A T(RMS) C I Average on-state current T = 85C 0.3 A T(AV) C F= 50Hz 10 A Non repetitive surge peak on-state current I TSM (Sine half wave, T initial = 25C) F= 60Hz 12 A J 2 2 2 I t I t Value for fusing t = 10 ms F = 50 Hz 0.5 A s p di/dt Critical rate of rise of on-state current I = 10mA T = 125C 80 A/s G J I Peak Gate Current t = 20 s T = 125C 0.5 A GM p J P Average gate power dissipation T = 125C 0.2 W G(AV) J T Storage junction temperature range -40 to 150 C stg T Operating junction temperature range -40 to 125 C J 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.12/08/20Thyristors EV Series 0.8 Amp Sensitive SCRs EV Series 0.5 Amp Sensitive SCRs Electrical Characteristics (T = 25C, unless otherwise specified) J Value Symbol Description Test Conditions Limit Unit S8X5ECS S8X5ECS2 Min. 20 20 A V = 6V D I DC Gate Trigger Current GT R = 100 Max. 100 50 A L V = 6V D V DC Gate Trigger Voltage Max. 0.8 V GT R = 100 L V Peak Reverse Gate Voltage I = 10A Min. 8 V GRM RG R = 1 K GK I Holding Current Max. 3 mA H Initial Current = 20mA T = 125C J Critical Rate-of-Rise of V = 67% of V D DRM dv/dt Min. 40 V/s Off-State Voltage Exp. Waveform R =1 k GK V = 1/2 V D DRM V Gate Non-Trigger Voltage R =1 k Min. 0.2 V GD GK T = 125C J t Turn-Off Time I = 0.5A Max. 35 s q T I =10mA G t Turn-On Time P = 15sec Typ. 2.3 s gt W I = 1.6A(pk) T Static Characteristics (T = 25C, unless otherwise specified) J Symbol Description Test Conditions Limit Value Unit V Peak On-State Voltage 0.5A device I = 4A t = 380 s MAX. 1.8 V TM TM p V Threshold Voltage - MAX 1.03 V T0 R Dynamic Resistance - MAX 106 m D T = 25C MAX. 3 A J I / I Off-State Current, Peak Repetitive DRM RRM T = 125C MAX. 500 A J Thermal Resistances Symbol Description Test Conditions Value Unit 1 R Junction to case (AC) I = 0.8A 35 C/W th(JC) T (RMS) 1 R Junction to ambient I = 0.8A 150 C/W th(j-a) T (RMS) 1. 60Hz AC resistive load condition, 100% conduction. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.12/08/20