TXN825RG Datasheet Standard 25 A 800 V SCR A Features On-state RMS current, I 25 A T(RMS) G Max. junction temperature = 125 C K Max. blocking voltage = V , V = 800 V DRM RRM I maximum = 40 mA GT High immunity dV/dt = 1500 V/s K TO-220AB insulated A ECOPACK 2 compliant component (RoHS and HF compliance) G Packaged in an insulated TO-220AB Insulating voltage 2500 V RMS UL1557 certified (file ref. E81734) Applications Solid State Relay (SSR) Bypass AC DC Inrush Current Limiter (ICL) Battery Charger AC DC voltage controlled rectifier Off board automotive battery charger Motor soft starter Product status link Description TXN825RG Available in through-hole package, the TXN825RG is suitable for general purpose Product summary applications. Symbol Value It uses clip assembly technology, therefore the performance is superior in surge current capabilities. I 25 A T(RMS) Housed in a TO-220AB ceramic insulated, this device provides an improved thermal V /V 800 V DRM RRM resistance. I 40 mA GT T 125 C j DS12424 - Rev 2 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.TXN825RG TXN825RG Characteristics 1 TXN825RG Characteristics Table 1. Absolute ratings (limiting values), T = 25 C unless otherwise specified j Symbol Parameter Value Unit I RMS on-state current (180 conduction angle) 25 T(RMS) T = 83 C A C I Average on-state current (180 conduction angle) 16 T(AV) t = 10 ms 300 p I Non repetitive surge peak on-state current A TSM t = 8.3 ms 314 p t = 10 ms It It value for fusing 450 As p Critical rate of rise of on-state current dl/dt f = 50 Hz 50 A/s I = 2 x I , tr 100 ns G GT V / V Repetitive surge peak off-state voltage (50-60 Hz) T = 125 C 800 V DRM RRM j I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j V Maximum peak reverse gate voltage 5 V RGM V Insulation RMS voltage, 1 minute, UL1557 certified E81734 2.5 kV INS Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test conditions Value Unit Min. 4 I mA GT V = 12 V, R = 30 Max. 40 D L V Max. 1.3 V GT V V = V , R = 3.3 k, T = 125 C Max. 0.2 V GD D DRM L j I I = 500 mA, gate open Max. 50 mA H T I I = 1.2 x I Max. 90 mA L G GT V = 536 V, gate open T = 125 C dV/dt Min. 1500 V/s D j Table 3. Static characteristics Symbol Test conditions Value Unit V I = 50 A, t = 380 s T = 25 C Max. 1.60 V TM TM p j V T = 125 C Threshold voltage Max. 0.77 V t0 j R T = 125 C Dynamic resistance Max. 14 m d j T = 25 C Max. 5 A j I / I V = V = 800 V DRM RRM DRM RRM T = 125 C Max. 4 mA j DS12424 - Rev 2 page 2/9