TN1605H-6G High temperature 16 A SCRs Datasheet - production data A Description Designed with high immunity switching to external surges, this device offers robust switching up to its 150C maximum Tj. G The combination of noise immunity and low gate K triggering current allows to design strong and A compact control circuit. Table 1: Device summary Order code Package VDRM/VRRM IGT G A TN1605H-6G DPAK 600 6 mA K DPAK Features High junction temperature: Tj = 150 C Gate triggering current IGT = 6 mA High noise immunity dV/dt = 200 V/s up to 150 C Blocking voltage VDRM/VRRM = 600 V High turn-on current rise dI/dt: 100 A/s ECOPACK 2 compliant component Applications Motorbikes voltage regulator circuits Inrush current limiting circuits Motor control circuits and starters Light dimmers Solid state relays June 2017 DocID030162 Rev 2 1/10 www.st.com This is information on a product in full production. Characteristics TN1605H-6G 1 Characteristics Table 2: Absolute maximum ratings (limiting values, Tj = 25 C unless otherwise specified) Symbol Parameter Value Unit RMS on-state current I T = 133 C 16 A T(RMS) c (180 conduction angle) T = 133 C 10 c Average on-state current IT(AV) Tc = 138 C 8 A (180 conduction angle) T = 142 C 6 c tp = 8.3 ms 153 Non repetitive surge peak I T initial = 25 C A TSM j on-state current t = 10 ms 140 p 2 2 2 I t I t value for fusing tp = 10 ms 98 A s Critical rate of rise of on-state I = 2 x I , G GT dl/dt f = 60 Hz 100 A/s current tr 100 ns, VDRM/VRRM Repetitive peak off-state voltage Tj = 150 C 600 V Non repetitive surge peak off- VDSM/VRSM tp = 10 ms 700 V state voltage PG(AV) Average gate power dissipation Tj = 150 C 1 W V Maximum peak reverse gate voltage 5 V RGM IGM Peak gate current tp = 20 s Tj = 150 C 4 A T Storage junction temperature range -40 to +150 C stg Tj Operating junction temperature range -40 to +150 C Table 3: Dynamic characteristics Symbol Parameter T Value Unit j 25 C Min. 3.5 I Typ. 4.5 mA GT VD = 12 V, RL = 33 Max. 6 V Max. 1.3 V GT VGD VD = 600, RL = 3.3 k 150 C Min. 0.15 V I I = 1.2 x I Max. 40 L G GT 25 C mA IH IT = 500 mA, gate open Max. 20 dV/dt V = 402 V, gate open 150 C Min. 200 V/s D ITM = 32 A, VD = 402 V, IG = 12 mA, (dIG/dt) t 25 C Typ. 1.9 s gt max = 0.2 A/s I = 32 A, V = 402 V, (dl/dt) = 30 A/s, TM D off tq 150 C Typ. 70 s V = 25 V, dV /dt = 20 V/s R D 2/10 DocID030162 Rev 2