TN1605H-6T High temperature 16 A SCRs Datasheet - production data A Applications Motorbikes voltage regulator circuits Inrush current limiting circuits G Motor control circuits and starters Light dimmers K Solid state relays A Description Designed with high immunity switching to K external surges, the device offers robust TO-220AB A G switching up to its 150 C maximum Tj. The combination of noise immunity and low gate triggering current allows to design strong and compact control circuit. Features Table 1: Device summary High junction temperature: Tj = 150 C Gate triggering current IGT = 6 mA Order code Package VDRM/VRRM IGT High noise immunity dV/dt = 200 V/s up to TN1605H-6T TO-220AB 600 6 mA 150 C Blocking voltage VDRM/VRRM = 600 V High turn-on current rise dI/dt: 100 A/s ECOPACK 2 compliant component May 2017 DocID030160 Rev 1 1/9 www.st.com This is information on a product in full production. Characteristics TN1605H-6T 1 Characteristics Table 2: Absolute maximum ratings (limiting values, Tj = 25 C unless otherwise specified) Symbol Parameter Value Unit RMS on-state current I T = 133 C 16 A T(RMS) c (180 conduction angle) T = 133 C 10 c Average on-state current IT(AV) Tc = 138 C 8 A (180 conduction angle) T = 142 C 6 c tp = 8.3 ms 153 Non repetitive surge peak I T initial = 25 C A TSM j on-state current t = 10 ms 140 p 2 2 2 I t I t value for fusing tp = 10 ms 98 A s Critical rate of rise of I = 2 x I , tr G GT dl/dt f = 60 Hz 100 A/s 100 ns, on-state current VDRM/VRRM Repetitive peak off-state voltage Tj = 150 C 600 V Non repetitive surge peak VDSM/VRSM tp = 10 ms 700 V off-state voltage PG(AV) Average gate power dissipation Tj = 150 C 1 W V Maximum peak reverse gate voltage 5 V RGM IGM Peak gate current tp = 20 s Tj = 150 C 4 A P Peak gate power dissipation t = 20 s T = 150 C 40 W GM p j PG(AV) Average gate power dissipation Tj = 150 C 1 W T Storage junction temperature range -40 to +150 C stg Tj Operating junction temperature range -40 to +150 C T Maximum lead temperature for soldering during 10 s 260 C L Table 3: Dynamic characteristics Symbol Parameter Tj Value Unit Min. 3.5 IGT Typ. 4.5 mA V = 12 V, R = 33 25 C D L Max. 6 VGT Max. 1.3 V V V = 600 V, R = 3.3 k 150 C Min. 0.15 V GD D L IL IG = 1.2 x IGT Max. 40 25 C mA I I = 500 mA, gate open Max. 20 H T dV/dt VD = 402 V, gate open 150 C Min. 200 V/s I = 32 A, V = 402 V, I = 12 mA, TM D G tgt 25 C Typ. 1.9 s (dI /dt) max = 0.2 A/s G ITM = 32 A, VD = 402 V, (dl/dt)off = 30 A/s, t 150 C Typ. 70 s q VR = 25 V, dVD/dt = 20 V/s 2/9 DocID030160 Rev 1