X-On Electronics has gained recognition as a prominent supplier of DB4 Diacs across the USA, India, Europe, Australia, and various other global locations. DB4 Diacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Diacs, ensuring timely deliveries around the world.

DB4 STMicroelectronics

DB4 electronic component of STMicroelectronics
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See Product Specifications
Part No.DB4
Manufacturer: STMicroelectronics
Category: Diacs
Description: Diac; Ifmax:2A; DO35; 35÷45V
Datasheet: DB4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
947: USD 0.0343 ea
Line Total: USD 32.48 
Availability - 3418
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 947  Multiples: 1
Pack Size: 1
Availability Price Quantity
3418
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 947
Multiples : 1
947 : USD 0.0343
2500 : USD 0.0343

13
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 10
Multiples : 10
10 : USD 0.0699
100 : USD 0.0563
300 : USD 0.0495
1000 : USD 0.0445
5000 : USD 0.0404
10000 : USD 0.0384

1227
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.35
100 : USD 0.161
250 : USD 0.1512
296 : USD 0.0574
500 : USD 0.0574

9728
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 84
Multiples : 1
84 : USD 0.4875
100 : USD 0.416
200 : USD 0.3868
500 : USD 0.3153
1000 : USD 0.2827
2000 : USD 0.2567

   
Manufacturer
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Breakover Voltage
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We are delighted to provide the DB4 from our Diacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DB4 and other electronic components in the Diacs category and beyond.

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DB3, DB4, SMDB3 Datasheet Diac Features V : 32 V and 40 V BO Low breakover current DO-35 Breakover voltage symmetry : 3V ECOPACK 2 compliant 2 Applications 3 Triggering device for Triac or SCR based motor / light dimmer 1 SOT-23 32 V trigger device for oscillator circuit Pin 1 and 3 must be shorted Start up triggering in lighting ballast for CFL, TL or LED lamps together Description Functioning as a trigger diode with a fixed voltage reference, the DB3/DB4 series can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts. The surface mount SOT23-3L package allows compact, SMD based designs for automated manufacturing. Product status link DB3 DB4 SMDB3 Product summary V Part number BO SMDB3 28 - 36 V DB3 28 - 36 V DB4 35 - 45 V DS2125 - Rev 3 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office.DB3, DB4, SMDB3 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), T = 25 C unless otherwise specified j Symbol Parameter Value Unit SMDB3 1.00 A I Repetitive peak on-state current, t = 20 s, F = 120 Hz TRM p DB3 / DB4 2.00 A T Storage junction temperature range -40 to +125 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Parameter Test conditions SMDB3 DB3 DB4 Unit Min. 28 28 35 (1) (2) V Breakover voltage C = 10 nF Typ. 32 32 40 V BO Max. 36 36 45 (2) I V - V I Breakover voltage symmetry Max. 3 3 3 V BO1 BO2 C = 10 nF (1) V V and V at 10 mA Min. 10 5 5 V Dynamic breakover voltage BO F (1) V See Figure 2. Test circuit, (R = 20 ) Min. 10 5 5 V O Output voltage (1) (2) I Max. 10 50 50 A BO Breakover current C = 10 nF (1) t See Figure 3. Rise time measurement Max. 0.5 2 2 s r Rise time (1) I V = 0.5 x V max Max. 1 10 10 A R Leakage current R BO (1) I Peak current See Figure 2. Test circuit Min. 1 0.30 0.30 A P 1. Applicable to both forward and reverse directions. 2. Connected in parallel to the device DS2125 - Rev 3 page 2/11

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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