SDT5H100SB Green 5.0A TRENCH SCHOTTKY RECTIFIER Product Summary Features and Benefits Low Forward Voltage Drop V (V) I (mA) F(MAX) R(MAX) VRRM (V) I (A) O Excellent High Temperature Stability +25C +25C Soft, Fast Switching Capability 100 5 0.62 0.1 Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data The SDT5H100SB provides very low V and extremely excellent F Surface Mount Package reverse leakage stability at high temperatures. It is ideal for use as a Polarity: Cathode Band rectifier, freewheel diode or blocking diode in: Case Material: Molded Plastic, UL Flammability Rating 94V-0 Terminals: Finish - Matte Tin Plated Leads, Solderable per DC-DC Converters e3 MIL-STD-202, Method 208 AC-DC Adaptors Weight: 0.096 grams (Approximate) Max Soldering Temperature +260C for 30 secs as per JEDEC J-STD-020 Bottom View Top View Ordering Information (Note 4) Part Number Case Packaging SDT5H100SB-13 SMB 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See SDT5H100SB Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 100 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 5 A O Non-Repetitive Peak Forward Surge Current 8.3ms 120 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Case (Note 5) R 25 C/W JC Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Forward Voltage Drop 0.57 0.62 V VF IF = 5A, TJ = +25C 0.1 mA V = 100V, T = +25C R J Leakage Current (Note 6) I R 20 mA V = 100V, T = +125C R J Notes: 5. Device mounted on FR-4 substrate, 1 *1 , 2oz, single-sided, PC boards with 0.56 *0.73 copper pad. 6. Short duration pulse test used to minimize self-heating effect. 3 100 2.5 10 2 Note 5 1 1.5 125 150 1 100 0.1 85 0.5 25 -55 0 0.01 0 1 2 3 4 5 6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 I , AVERAGE FORWARD CURRENT (A) F(AV) V , INSTANTANEOUS FORWARD VOLTAGE (V) F Figure 1. Forward Power Dissipation Figure 2. Typical Forward Characteristics 2 of 4 SDT5H100SB January 2019 Diodes Incorporated www.diodes.com Document number: DS41522 Rev. 2 - 2 NEW PRODUCT P AVERAGE FORWARD POWER F(AV), DISSIPATION (W) I , INSTANTANEOUS FORWARD CURRENT (A) F