Gen-III 20A - 650V SiC Schottky Diode UJ3D06520KSD . Datasheet . Description CASE rd United Silicon Carbide, Inc. offers the 3 generation of high CASE performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. 1 2 3 1 2 3 Part Number Package Marking UJ3D06520KSD UJ3D06520KSD TO-247-3L Features Typical Applications w 175C maximum operating junction temperature w Power converters w Easy paralleling w Industrial motor drives w Extremely fast switching not dependent on temperature w Switching-mode power supplies No reverse or forward recovery w w Power factor correction modules w Enhanced surge current capability, MPS structure Excellent thermal performance, Ag sintered w w 100% UIS tested w AEC-Q101 qualified Maximum Ratings Parameter Test Conditions Value (Leg/Device) Symbol Units DC blocking voltage V 650 V R Repetitive peak reverse voltage, T =25C V 650 V j RRM Surge peak reverse voltage V 650 V RSM T = 152C Maximum DC forward current I 10/20 C A F T = 25C, t = 10ms 70/140 Non-repetitive forward surge current C p I A FSM sine halfwave T = 110C, t =10ms 60/120 C p T = 25C, t = 10ms 45.9/91.8 Repetitive forward surge current C p I A FRM sine halfwave, D=0.1 T = 110C, t =10ms 28.7/57.4 C p T = 25C, t =10ms 455/910 C p Non-repetitive peak forward current I A F,max T = 110C, t =10ms 455/910 C p T = 25C, t =10ms 24.5/98 C p 2 2 2 i t value i dt A s T = 110C, t =10ms 18/72 C p T = 25C 136.4/272.8 C P Power dissipation W Tot T = 152C 20.9/41.8 C Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Soldering temperatures, wavesoldering only 1.6mm from case for T 260 C sold allowed at leads 10s Rev. B, April 2018 1 For more information go to www.unitedsic.com. Gen-III 20A - 650V SiC Schottky Diode UJ3D06520KSD . Datasheet . Electrical Characteristics T = +25C unless otherwise specified J Value (Leg/Device) Parameter Symbol Test Conditions Units Min Typ Max I = 10/20A, T = 25C - 1.5 1.7 F J V Forward voltage I = 10/20A, T =150C V F - 1.68 2 F J I = 10/20A, T =175C - 1.75 2.1 F J V =650V, T =25C - 10/20 60/120 R j Reverse current I mA R V =650V, T =175C - 150/300 R J (1) Q V =400V Total capacitive charge 23/46 nC C R V =1V, f=1MHz 327/654 R V =300V, f=1MHz Total capacitance C 38/76 pF R V =600V, f=1MHz 34/68 R Capacitance stored energy E V =400V 3.4/6.8 mJ C R (1) Q is independent on T , di /dt, and I as shown in the application note USCi AN0011. c j F F Thermal characteristics Value (Leg/Device) Parameter symbol Test Conditions Units Min Typ Max Thermal resistance R 0.82/0.41 1.1/0.55 C/W qJC Typical Performance 20 70 - 55C - 55C 60 25C 25C 100C 100C 15 50 150C 150C 175C 175C 40 10 30 20 5 Per leg Per leg 10 0 0 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6 Forward Voltage, V (V) Forward Voltage, V (V) F F Figure 1 Typical forward characteristics per leg Figure 2 Typical forward characteristics in surge current per leg Rev. B, April 2018 2 For more information go to www.unitedsic.com. Forward Current, I (A) F Forward Current, I (A) F