50A -1200V SiC Schottky Diode Rev. D, May 2020 DATASHEET Description rd UnitedSiC offers the 3 generation of high performance SiC Merged- UJ3D1250K PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. CASE Features 2(CASE) w Maximum operating temperature of 175C w Easy paralleling w Extremely fast switching not dependent on temperature w No reverse or forward recovery w Enhanced surge current capability, MPS structure 1 3 w 100% UIS tested 1 2 3 w AEC-Q101 qualified Typical applications w Power converters Part Number Package Marking w Industrial motor drives w Switch mode power supplies UJ3D1250K TO-247-3L UJ3D1250K w Power factor correction modules Datasheet: UJ3D1250K Rev. D, May 2020 1Maximum Ratings Parameter Symbol Test Conditions Value Units V DC blocking voltage 1200 V R Repetitive peak reverse voltage, T =25C V 1200 V J RRM Surge peak reverse voltage V 1200 V RSM T = 112C Maximum DC forward current I 50 A C F Non-repetitive forward surge current I T = 25C, t = 10ms 275 A FSM C p sine halfwave T = 25C, t = 10ms Repetitive forward surge current 163.5 C p I A FRM sine halfwave, D=0.1 T = 110C, t = 10ms 99.6 C p T = 25C, t = 10ms 2400 C p I Non-repetitive peak forward current A F,max T = 110C, t = 10ms 2400 C p 2 2 2 T = 25C, t = 10ms i t value i dt 378 A s C p T = 25C 319 C P Power dissipation W tot T = 112C 134 C Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Soldering temperatures, wavesoldering only T 1.6mm from case for 10s 260 C sold allowed at leads Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R 0.36 0.47 C/W qJC Datasheet: UJ3D1250K Rev. D, May 2020 2