VS-HFA210NJ60CPbF www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 210 A FEATURES Very low Q and t rr rr Lug Lug UL approved file E222165 terminal terminal Designed and qualified for industrial level anode 1 anode 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 BENEFITS Base common Reduced RFI and EMI TO-244 cathode Reduced snubbing DESCRIPTION / APPLICATIONS HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for PRIMARY CHARACTERISTICS different values of current, temperature and dI /dt simplifies F I 210 A F(AV) the calculations of losses in the operating conditions. V 600 V R The softness of the recovery eliminates the need for a I at T 120 A at 100 C F(DC) C snubber in most applications. These devices are ideally Package TO-244 suited for power converters, motors drives and other applications where switching losses are significant portion Circuit configuration Two diodes common cathode of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage V 600 V R T = 25 C 235 C Continuous forward current I F T = 100 C 120 A C Single pulse forward current I Limited by junction temperature 600 FSM Non-repetitive avalanche energy E L = 100 H, duty cycle limited by maximum T 2.2 mJ AS J T = 25 C 463 C Maximum power dissipation P W D T = 100 C 185 C Operating junction and storage T , T -55 to +150 C J Stg temperature range ELECTRICAL SPECIFICATIONS PER LEG (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 600 - - BR R breakdown voltage I = 105 A - 1.38 1.9 F V Maximum forward voltage V I = 210 A See fig. 1 - 1.6 2.25 FM F I = 105 A, T = 125 C - 1.3 1.56 F J Maximum reverse leakage current I T = 125 C, V = 480 V See fig. 2 - 1.8 6.0 mA RM J R Junction capacitance C V = 200 V See fig. 3 - 200 300 pF T R Series inductance L From top of terminal hole to mounting plane - 6.0 - nH S Revision: 11-Jan-18 Document Number: 94062 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-HFA210NJ60CPbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 35 - F F R Reverse recovery time (fig. 5) t T = 25 C - 90 140 ns rr J T = 125 C - 160 240 J T = 25 C - 10 18 J Peak recovery current (fig. 6) I A RRM I = 105 A F T = 125 C - 15 30 J dI /dt = 200 A/s F T = 25 C - 450 1300 J V = 200 V R Reverse recovery charge (fig. 7) Q nC rr T = 125 C - 1200 3600 J T = 25 C - 310 - J Peak rate of recovery current (fig. 8) dI /dt A/s (rec)M T = 125 C - 240 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLMIN.TYP.MAX.UNITS Maximum junction and storage temperature range T , T -55 - 150 C J Stg per leg - - 0.27 Thermal resistance, junction to case R thJC C/W per module - - 0.135 K/W Typical thermal resistance, case to heatsink R -0.10 - thCS -68 - g Weight -2.4 - oz. (1) Mounting torque 30 (3.4) - 40 (4.6) lbf in Mounting torque center hole 12 (1.4) - 18 (2.1) (N m) Terminal torque 30 (3.4) - 40 (4.6) Vertical pull -- 80 lbf in 2 lever pull -- 35 Note (1) Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface. Gradually tighten each mounting bolt in 5 to 10 lbf in steps until desired or maximum torque limits are reached 1000 10 000 T = 150 C J 1000 T = 125 C J 100 100 10 10 T = 150 C J T = 125 C J T = 25 C 1 J T = 25 C J 1 0.1 100 200 300 400 500 600 0.2 0.7 1.2 1.7 2.2 2.7 3.2 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop vs. Fig. 2 - Typical Reverse Current vs. Instantaneous Forward Current (Per Leg) Reverse Voltage (Per Leg) Revision: 11-Jan-18 Document Number: 94062 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R