VS-HFA08TA60CPbF, VS-HFA08TA60C-N3 www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES Ultrafast and ultrasoft recovery Very low I and Q RRM rr Designed and qualified according to JEDEC -JESD47 Material categorization: for definitions of compliance please see TO-220AB www.vishay.com/doc 99912 Base Available common BENEFITS cathode Reduced RFI and EMI 2 Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing 2 1 3 Common Reduced parts count cathode Anode Anode DESCRIPTION VS-HFA08TA60C... is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 4 A per PRODUCT SUMMARY leg continuous current, the VS-HFA08TA60C... is especially well suited for use as the companion diode for IGBTs and Package TO-220AB MOSFETs. In addition to ultrafast recovery time, the I 2 x 4 A F(AV) HEXFRED product line features extremely low values of V 600 V peak recovery current (I ) and does not exhibit any R RRM tendency to snap-off during the t portion of recovery. The b V at I 1.4 V F F HEXFRED features combine to offer designers a rectifier t typ. 17 ns rr with lower noise and significantly lower switching losses in both the diode and the switching transistor. These T max. 150 C J HEXFRED advantages can help to significantly reduce Diode variation Common cathode snubbing, component count and heatsink sizes. The HEXFRED VS-HFA08TA60C... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 600 V R per leg 4 Maximum continuous forward current I T = 100 C F C per device 8 A 25 Single pulse forward current I FSM Maximum repetitive forward current I 16 FRM T = 25 C 25 C Maximum power dissipation P W D T = 100 C 10 C Operating junction and storage temperature range T , T -55 to +150 C J Stg Revision: 10-Jul-15 Document Number: 94043 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-HFA08TA60CPbF, VS-HFA08TA60C-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 600 - - BR R breakdown voltage I = 4.0 A -1.5 1.8 F V Maximum forward voltage V I = 8.0 A See fig. 1 - 1.8 2.2 FM F I = 4.0 A, T = 125 C - 1.4 1.7 F J V = V rated - 0.17 3.0 R R Maximum reverse I See fig. 2 A RM leakage current T = 125 C, V = 0.8 x V rated - 44 300 J R R Junction capacitance C V = 200 V See fig. 3 - 4.0 8.0 pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS t I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 17 - rr F F R Reverse recovery time t T = 25 C -28 42 ns rr1 J See fig. 5, 6 and 16 t T = 125 C - 38 57 rr2 J I T = 25 C - 2.9 5.2 RRM1 J Peak recovery current A See fig. 7 and 8 I T = 125 C - 3.7 6.7 RRM2 J I = 4.0 A F dI /dt = 200 A/s F Q T = 25 C - 40 60 rr1 J Reverse recovery charge V = 200 V nC R See fig. 9 and 10 Q T = 125 C - 70 105 rr2 J Peak rate of fall of recovery dI /dt1 T = 25 C - 280 - (rec)M J current during t A/s b See fig. 11 and 12 dI /dt2 T = 125 C - 235 - (rec)M J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T 0.063 from case (1.6 mm) for 10 s - - 300 C lead Thermal resistance, R --5.0 thJC junction to case Thermal resistance, R Typical socket mount - - 80 K/W thJA junction to ambient Thermal resistance, R Mounting surface, flat, smooth and greased - 0.5 - thCS case to heatsink -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-220AB HFA08TA60C Revision: 10-Jul-15 Document Number: 94043 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000