VS-ETU0805-M3, VS-ETU0805FP-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 8 A FRED Pt FEATURES Low forward voltage drop Ultrafast soft recovery time 175 C operating junction temperature Low leakage current Fully isolated package (V = 2500 V ) INS RMS 2L TO-220AC 2L TO-220 FULL-PAK True 2 pin package Base Designed and qualified according to cathode JEDEC -JESD 47 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 1 3 1 2 DESCRIPTION Cathode Anode Cathode Anode Ultralow V , soft-switching ultrafast rectifiers optimized for F VS-ETU0805-M3 VS-ETU0805FP-M3 Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). The minimized conduction loss, optimized stored charge PRODUCT SUMMARY and low recovery current minimized the switching losses Package 2L TO-220AC, 2L TO-220FP and reduce over dissipation in the switching element and I 8 A snubbers. F(AV) V 500 V The device is also intended for use as a freewheeling diode R in power supplies and other power switching applications. V at I 0.9 V F F t (typ.) 28 ns rr APPLICATIONS T max. 175 C J AC/DC SMPS 70 W to 400 W Diode variation Single die e.g. laptop and printer AC adaptors, desktop PC, TV and monitor, games units and DVD AC/DC power supplies. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 500 V RRM T = 151 C C Average rectified forward current in DC I 8 F(AV) FULL-PAK T = 124 C A C Non-repetitive peak surge current I T = 25 C 110 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 500 - - R blocking voltage V R V I = 8 A - 1.05 1.25 F Forward voltage V F I = 8 A, T = 150 C - 0.9 1.03 F J V = V rated - 0.005 9 R R Reverse leakage current I A R T = 150 C, V = V rated - 5 50 J R R Junction capacitance C V = 500 V - 6 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 10-Jul-15 Document Number: 94813 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-ETU0805-M3, VS-ETU0805FP-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 28 - F F R I = 8 A, dI /dt = 100 A/s, V = 30 V - 54 - F F R Reverse recovery time t ns rr T = 25 C -50- J T = 125 C - 90 - J I = 8 A F T = 25 C - 7.0 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 10 - J V = 200 V R T = 25 C - 180 - J Reverse recovery charge Q nC rr T = 125 C - 450 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range -2.0 2.6 Thermal resistance, R thJC junction to case FULL-PAK - 4.4 5.5 Thermal resistance, C/W R Typical socket mount - - 50 thJA junction to ambient Typical thermal resistance, Mounting surface, flat, smooth and R -0.5 - thCS case to heatsink greased -2.0 - g Weight - 0.007 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Case style 2L TO-220AC ETU0805 Marking device Case style 2L TO-220 FULL-PAK ETU0805FP Revision: 10-Jul-15 Document Number: 94813 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000