VS-EBU15006-F4 www.vishay.com Vishay Semiconductors FRED Pt Ultrafast Soft Recovery Diode, 150 A FEATURES Ultrafast recovery time 175 C max. operating junction temperature Screw mounting only Designed and qualified according to JEDEC -JESD 47 Cathode Anode PowerTab package Material categorization: for definitions of compliance please see PowerTab www.vishay.com/doc 99912 BENEFITS Reduced RFI and EMI Higher frequency operation PRODUCT SUMMARY Reduced snubbing Package PowerTab Reduced parts count I 150 A F(AV) DESCRIPTION/APPLICATIONS V 600 V R These diodes are optimized to reduce losses and EMI/RFI in V at I 1.08 V F F high frequency power conditioning systems. t (typ.) 50 ns rr The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally T max. 175 C J suited for HF welding, power converters and other Diode variation Single die applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX.UNITS Cathode to anode voltage V 600 V R Continuous forward current I T = 89 C 150 F(AV) C A Single pulse forward current I T = 25 C 1200 FSM C Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 200 A 600 - - R blocking voltage V R I = 150 A - 1.27 1.63 F V Forward voltage V I = 150 A, T = 125 C - 1.15 1.43 F F J I = 150 A, T = 175 C - 1.08 1.32 F J V = V rated - - 8 A R R Reverse leakage current I R T = 150 C, V = V rated - - 0.5 mA J R R Junction capacitance C V = 600 V - 70 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 3.5 - nH S Revision: 16-Jun-15 Document Number: 94907 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-EBU15006-F4 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 50 - F F R I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 40 - F F R Reverse recovery time t ns rr T = 25 C -100 - J T = 125 C - 210 - J I = 50 A F T = 25 C - 10.5 - J Peak recovery current I V = 200 V A RRM R T = 125 C - 22 - J dI /dt = 200 A/s F T = 25 C - 550 - J Reverse recovery charge Q nC rr T = 125 C - 2350 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, R --0.35 thJC junction to case K/W Typical thermal resistance, R Mounting surface, flat, smooth and greased - 0.2 - thCS case to heatsink - - 5.02 g Weight -0.18 - oz. 1.2 2.4 kgf cm Mounting torque - (10) (20) (lbf in) Marking device Case style PowerTab EBU15006 Revision: 16-Jun-15 Document Number: 94907 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000