VS-EBU15006HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt FEATURES Ultrafast recovery time 175 C max. operating junction temperature Screw mounting only AEC-Q101 qualified Cathode Anode PowerTab package Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PowerTab BENEFITS Reduced RFI and EMI Higher frequency operation Reduced snubbing PRODUCT SUMMARY Reduced parts count Package PowerTab DESCRIPTION/APPLICATIONS I 150 A F(AV) These diodes are optimized to reduce losses and EMI/RFI in V 600 V R high frequency power conditioning systems. V at I 1.08 V F F The softness of the recovery eliminates the need for a t (typ.) 50 ns rr snubber in most applications. These devices are ideally suited for HF welding, power converters and other T max. 175 C J applications where switching losses are not significant Diode variation Single die portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage V 600 V R Continuous forward current I T = 89 C 150 F(AV) C A Single pulse forward current I T = 25 C 1200 FSM C Operating junction and storage T , T -55 to +175 C J Stg temperatures ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 200 A 600 - - R blocking voltage V R I = 150 A - 1.27 1.63 F V Forward voltage V I = 150 A, T = 125 C - 1.15 1.43 F F J I = 150 A, T = 175 C - 1.08 1.32 F J V = V rated - - 8 A R R Reverse leakage current I R T = 150 C, V = V rated - - 0.5 mA J R R Junction capacitance C V = 600 V - 70 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 3.5 - nH S Revision: 16-Jun-15 Document Number: 94806 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-EBU15006HF4 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 50 - F F R I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 40 - F F R Reverse recovery time t ns rr T = 25 C -100 - J T = 125 C - 210 - J I = 50 A F T = 25 C - 10.5 - J Peak recovery current I V = 200 V A RRM R T = 125 C - 22 - J dI /dt = 200 A/s F T = 25 C - 550 - J Reverse recovery charge Q nC rr T = 125 C - 2350 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, R --0.35 thJC junction to case K/W Typical thermal resistance, R Mounting surface, flat, smooth and greased - 0.2 - thCS case to heatsink - - 5.02 g Weight -0.18 - oz. 1.2 2.4 kgf cm Mounting torque - (10) (20) (lbf in) Marking device Case style PowerTab EBU15006H Revision: 16-Jun-15 Document Number: 94806 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000