X-On Electronics has gained recognition as a prominent supplier of VS-EBU8006HF4 Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-EBU8006HF4 Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

VS-EBU8006HF4 Vishay

VS-EBU8006HF4 electronic component of Vishay
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Part No.VS-EBU8006HF4
Manufacturer: Vishay
Category: Rectifiers
Description: Rectifiers 80A 600V Ultrafast 46ns FRED Pt
Datasheet: VS-EBU8006HF4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 7.1875
10 : USD 6.164
100 : USD 5.129
250 : USD 4.6345
375 : USD 4.4735
1125 : USD 4.278
N/A

Obsolete
   
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If - Forward Current
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Ir - Reverse Current
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Minimum Operating Temperature
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We are delighted to provide the VS-EBU8006HF4 from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-EBU8006HF4 and other electronic components in the Rectifiers category and beyond.

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VS-EBU8006HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 80 A FRED Pt FEATURES Ultrafast recovery time 175 C max. operating junction temperature Screw mounting only AEC-Q101 qualified Cathode Anode PowerTab package Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PowerTab BENEFITS Reduced RFI and EMI Higher frequency operation Reduced snubbing PRODUCT SUMMARY Reduced parts count Package PowerTab DESCRIPTION/APPLICATIONS I 80 A F(AV) These diodes are optimized to reduce losses and EMI/RFI in V 600 V R high frequency power conditioning systems. V at I 1.53 V F F The softness of the recovery eliminates the need for a t (typ.) 46 ns rr snubber in most applications. These devices are ideally suited for HF welding, power converters and other T max. 175 C J applications where switching losses are not significant Diode variation Single die portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage V 600 V R Continuous forward current I T = 113 C 80 F(AV) C A Single pulse forward current I T = 25 C 750 FSM C Operating junction and storage T , T -55 to +175 C J Stg temperatures ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 200 A 600 - - R blocking voltage V R I = 80 A - 1.25 1.53 F V Forward voltage V I = 80 A, T = 125 C - 1.13 1.35 F F J I = 80 A, T = 175 C - 1.07 1.25 F J V = V rated - - 8 A R R Reverse leakage current I R T = 150 C, V = V rated - - 0.5 mA J R R Junction capacitance C V = 600 V - 39 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 3.5 - nH S Revision: 16-Jun-15 Document Number: 94805 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-EBU8006HF4 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 46 - F F R I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 36 - F F R Reverse recovery time t ns rr T = 25 C -100 - J T = 125 C - 190 - J I = 50 A F T = 25 C - 10 - J Peak recovery current I V = 200 V A RRM R T = 125 C - 17.5 - J dI /dt = 200 A/s F T = 25 C - 520 - J Reverse recovery charge Q nC rr T = 125 C - 1650 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, R --0.5 thJC junction to case K/W Typical thermal resistance, R Mounting surface, flat, smooth and greased - 0.2 - thCS case to heatsink - - 5.02 g Weight -0.18 - oz. 1.2 2.4 kgf cm Mounting torque - (10) (20) (lbf in) Marking device Case style PowerTab EBU8006H Revision: 16-Jun-15 Document Number: 94805 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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BEYSCHLAG
DALE
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DLE
DRALORIC / VISHAY
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Vishay / Beyschlag
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Vishay / MCB Industrie
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VISHAY ROEDERSTEIN
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Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
VISHAY SMALL SIGNAL
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