VS-E5PH3012L-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt G5 FEATURES Base cathode Hyperfast and optimized Q rr 2 Best in class forward voltage drop and switchin g losses trade off 2 Optimized for high speed operation 1 175 C maximum operating junction temperature 1 3 3 Polyimide passivation Cathode Anode TO-247AD 2L Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION / APPLICATIONS I 30 A F(AV) Featuring a unique combination of low conduction and V 1200 V R switching losses, this rectifier is the right choice for high V at I at 125 C 1.7 V F F frequency converters, both soft switched / resonant. t 32 ns rr Specifically designed to improve efficiency of PFC and T max. 175 C J output rectification stages of EV / HEV battery charging Package TO-247AD 2L stations, booster stage of solar inverters and UPS Circuit configuration Single applications, these devices are perfectly matched to operate with MOSFETs or high speed IGBTs. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Repetitive peak reverse voltage V 1200 V RRM Average rectified forward current I T = 115 C, D = 0.50 30 F(AV) C Non-repetitive peak surge current I T = 45 C, t = 10 ms, sine wave 250 A FSM C p Repetitive peak forward current I T = 115 C, D = 0.50, f = 20 kHz 60 FRM C Operating junction and storage temperature T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 1200 - - BR R R I = 30 A - 1.9 2.3 V F Forward voltage V F I = 30 A, T = 125 C - 1.7 - F J V = V rated - - 50 R R Reverse leakage current I A R T = 125 C, V = V rated - - 500 J R R Junction capacitance C V = 200 V - 17 - pF T R Series inductance L Measured to lead 5 mm from package body - 8 - nH S Revision: 08-Feb-2021 Document Number: 96501 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-E5PH3012L-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 32 - F F R Reverse recovery time t T = 25 C - 113 - ns rr J T = 125 C - 175 - J I = 20 A F T = 25 C - 17 - J Peak recovery current I dI /dt = 600 A/s A RRM F T = 125 C - 26 - J V = 400 V R T = 25 C - 850 - J Reverse recovery charge Q nC rr T = 125 C - 2150 - J T = 25 C -85- J Reverse recovery time t ns rr T = 125 C - 132 - J I = 30 A F T = 25 C - 30 - J Peak recovery current I dI /dt = 1000 A/s A RRM F T = 125 C - 43 - J V = 800 V R T = 25 C - 1350 - J Reverse recovery charge Q nC rr T = 125 C - 3215 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, junction-to-case R --0.8C/W thJC -5.5 - g Weight -0.2 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Maximum junction and storage T , T -55 - 175 C J Stg temperature range Marking device Case style: TO-247AD 2L E5PH3012L 100 1000 T = 175 C J 100 T = 125 C J 10 T = 175 C J 10 T = 25 C J T = 125 C J 1 T = 25 C J 1 0.1 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000 1200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 08-Feb-2021 Document Number: 96501 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R