VS-EPU6006LHN3, VS-APU6006LHN3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt FEATURES Ultrafast recovery time Low forward voltage drop 2 175 C operating junction temperature 1 1 AEC-Q101 qualified meets JESD 201 class 1 2 whisker test 3 3 TO-247AD 2L TO-247AD 3L Material categorization: for definitions of compliance Base cathode Base cathode please see www.vishay.com/doc 99912 2 2 DESCRIPTION / APPLICATIONS VS-EPU60... series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward 13 1 3 Cathode Anode voltage drop and ultrafast recovery time. Anode Anode The planar structure and the platinum doped life time control VS-EPU6006LHM3 VS-APU6006LHM3 guarantee the best overall performance, ruggedness and reliability characteristics. PRIMARY CHARACTERISTICS These devices are intended for use in the output rectification I 60 A F(AV) stage of SMPS, welding, UPS, DC/DC converters as well as V 600 V freewheeling diodes in low voltage inverters and chopper R motor drives. V at I 1.05 V F F Their extremely optimized stored charge and low recovery t typ. 32 ns rr current minimize the switching losses and reduce over T max. 175 C J dissipation in the switching element and snubbers. Package TO-247AD 2L, TO-247AD 3L Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX.UNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current in DC I T = 116 C 60 F(AV) C A Single pulse forward current I T = 25 C, t = 8.3 ms half sine wave 600 FSM C p Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R I = 60 A - 1.2 1.5 F V Forward voltage V I = 60 A, T = 125 C - 1.1 1.3 F F J I = 60 A, T = 175 C - 1.05 1.2 F J V = V rated - 0.2 30 R R Reverse leakage current I A R T = 150 C, V = V rated - - 200 J R R Junction capacitance C V = 600 V - 38 - pF T R Revision: 10-Oct-2018 Document Number: 95957 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-EPU6006LHN3, VS-APU6006LHN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, di /dt = 200 A/s, V = 30 V - 32 - F F R Reverse recovery time t T = 25 C - 110 - ns rr J T = 125 C - 200 - J I = 60 A T = 25 C F - 10 - J Peak recovery current I di /dt = 200 A/s A RRM F T = 125 C - 19 - J V = 200 V R T = 25 C - 530 - J Reverse recovery charge Q nC rr T = 125 C - 1900 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -55 - 175 C J Stg storage temperature range Thermal resistance, R --0.65 thJC junction to case Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient Thermal resistance, Mounting surface, flat, smooth R -0.5 - thCS case to heat sink and greased -6 - g Weight -0.21 - oz. 6 1.2 kgf. cm Mounting torque - (5) (10) (lbf in) Case style: TO-247AD 2L EPU6006LH Marking device Case style: TO-247AD 3L APU6006LH Revision: 10-Oct-2018 Document Number: 95957 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000