VS-15ETL06S-M3, VS-15ETL06-1-M3 www.vishay.com Vishay Semiconductors Ultralow V Hyperfast Rectifier for Discontinuous Mode PFC, F 15 A FRED Pt FEATURES Benchmark ultralow forward voltage drop Hyperfast recovery time Low leakage current 2 1 175 C operating junction temperature 1 Meets MSL level 1, per J-STD-020, LF maximum peak of 3 2 245 C 2 D PAK (TO-263AB) 3 TO-262AA Material categorization: for definitions of compliance Base please see www.vishay.com/doc 99912 cathode 2 2 DESCRIPTION State of the art, ultralow V , soft-switching hyperfast F rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). 3 1 3 1 The minimized conduction loss, optimized stored charge N/C Anode N/C Anode and low recovery current minimize the switching losses and VS-15ETL06S-M3 VS-15ETL06-1-M3 reduce over dissipation in the switching element and snubbers. The device is also intended for use as a freewheeling diode PRIMARY CHARACTERISTICS in power supplies and other power switching applications. I 15 A F(AV) V 600 V APPLICATIONS R V at I 0.85 V F F AC/DC SMPS 70 W to 400 W t (typ.) 60 ns rr e.g. laptop and printer AC adaptors, desktop PC, TV and T max. 175 C monitor, games units and DVD AC/DC power supplies. J 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 154 C 15 F(AV) C Non-repetitive peak surge current I T = 25 C 250 A FSM J Peak repetitive forward current I 30 FM Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 15 A - 0.99 1.05 F Forward voltage V F I = 15 A, T = 150 C - 0.85 0.92 F J V = V rated - 0.1 10 R R Reverse leakage current I A R T = 150 C, V = V rated - 15 120 J R R Junction capacitance C V = 600 V - 20 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 24-Oct-17 Document Number: 96315 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-15ETL06S-M3, VS-15ETL06-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 60 120 F F R I = 15 A, dI /dt = 100 A/s, V = 30 V - 190 270 F F R Reverse recovery time t ns rr T = 25 C - 220 - J = 125 C - 320 - T J I = 15 A F T = 25 C - 19 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 26 - J V = 390 V R T = 25 C - 2.2 - J Reverse recovery charge Q C rr T = 125 C - 4.3 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -1.01.3 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth and R -0.5 - thCS case to heatsink greased -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style D PAK (TO-263AB) 15ETL06S Marking device Case style TO-262AA 15ETL06-1 Revision: 24-Oct-17 Document Number: 96315 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000