SBR3U40S1FQ Green 3A SBR SUPER BARRIER RECTIFIER Product Summary ( T = +25C) Features and Benefits A Ultra Low Forward Voltage Drop V (V) I (A) V (V) I (A) RRM O F(MAX) R(MAX) Superior Forward Surge Capability 40 3 0.49 180 Patented Interlocking Clip Design for High Surge Current Capacity Patented Super Barrier Rectifier Technology +150C Operation Junction Temperature Description and Applications Lead-Free Finish RoHS Compliant (Notes 1 & 2) The SBR3U40S1FQ is a single rectifier packaged in SOD123F, Halogen and Antimony Free. Green Device (Note 3) offering very low forward voltage drop (V ) and lower reverse leakage F Qualified to AEC-Q101 Standards for High Reliability stability at high temperatures. PPAP Capable (Note 4) DC-DC Converter Mechanical Data AC-DC Rectifier Reverse Polarity Protection Case: SOD123F SMPS Case Material: Molded Plastic, Green Molding Compound. Blocking Diode UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe. e3 Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.0016 grams (Approximate) SOD123F Top View Ordering Information (Note 5) Part Number Case Packaging SBR3U40S1FQ-7 SOD123F 3000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See SBR3U40S1FQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage 40 V V RRM DC Blocking Voltage Average Rectified Output Current I 3 A O Non-Repetitive Peak Forward Surge Current 8.3mS I 50 A FSM Thermal Characteristics Characteristic Symbol Value Unit Maximum Thermal Resistance Junction to Ambient (Note 6) R 100 C/W JA Maximum Thermal Resistance Junction to Case (Note 6) R 35 C/W JC Operating and Storage Temperature Range T T -65 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 0.35 0.39 I = 1A, T = +25C F J Forward Voltage Drop V V F 0.44 0.49 I = 3A, T = +25C F J 70 180 A V = 40V , T = +25C R J Leakage Current (Note 7) I R 16 60 mA V = 40V , T = +125C R J Notes: 6. Device mounted on FR-4 substrate, 0.4 *0.5 , 2oz, single-sided, PC boards with 0.2 *0.25 copper pad. 7. Short duration pulse test used to minimize self-heating effect. 2 of 5 SBR3U40S1FQ July 2017 Diodes Incorporated www.diodes.com Document number: DS39038 Rev. 3 - 2 NEW PRODUCT