VS-E4PU6006LHN3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt Gen 4 FEATURES Base cathode Gen 4 FRED Pt technology 2 Low I and reverse recovery charge RRM Very low forward voltage drop 2 1 Polymide passivated chip for high reliability standard 1 3 3 Anode 175 C operating junction temperature Cathode TO-247AD 2L AEC-Q101 qualified, meets JESD 201 class 1A whisker test Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 I 60 A F(AV) DESCRIPTION V 600 V R Gen 4 Fred technology, state of the art, ultralow V , soft V at I 1.29 V F F F switching optimized for Discontinuous (Critical) Mode (DCM) t typ. See Recovery table rr and IGBT F/W diode. T max. 175 C J The minimized conduction loss, optimized stored charge Package TO-247AD 2L and low recovery current minimized the switching losses and reduce over dissipation in the switching element and Circuit configuration Single snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 116 C 60 F(AV) C A Non-repetitive peak surge current I T = 25 C, t = 8.3 ms half sine wave 450 FSM C p Operating junction and storage temperature T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 600 - - BR R R I = 30 A - 1.4 - F I = 60 A - 1.46 1.7 F I = 30 A, T = 125 C - 1.26 - V F J Forward voltage V F I = 60 A, T = 125 C - 1.33 - F J I = 30 A, T = 150 C - 1.22 - F J I = 60 A, T = 150 C - 1.29 - F J V = V rated - - 50 R R Reverse leakage current I A R T = 125 C, V = V rated - - 500 J R R Junction capacitance C V = 600 V - 30 - pF T R Revision: 25-Oct-2018 Document Number: 95940 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-E4PU6006LHN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS T = 25 C -74- J Reverse recovery time t ns rr T = 125 C - 105 - J I = 60 A F T = 25 C - 31 - J Peak recovery current I dI /dt = 1000 A/s A RRM F T = 125 C - 50 - J V = 400 V R T = 25 C - 1530 - J Reverse recovery charge Q nC rr T = 125 C - 3520 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, junction to case R --0.6C/W thJC Thermal resistance, case to heat sink R -0.25- thCS -6.0 - g Weight -0.21- oz. 6.0 12 kgf cm Mounting torque - (5) (20) (lbf in) Marking device Case style TO-247AD 2L E4PU6006LH 1000 1000 175 C 100 150 C 100 10 125 C T = 175 C J 1 10 0.1 25 C T = 150 C J 0.01 T = 125 C J T = 25 C J 1 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 V -Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 100 10 0 100 200 300 400 500 600 V - Reverse Voltage (V) R Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Revision: 25-Oct-2018 Document Number: 95940 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F C - Junction Capacitance (pF) T I - Reverse Current (A) R