VS-GA400TD60S www.vishay.com Vishay Semiconductors Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 400 A FEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Low V CE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al O DBC 2 3 UL approved file E78996 Dual INT-A-PAK Low Prole Designed for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS V 600 V CES BENEFITS I DC at T = 25 C 750 A C C Increased operating efficiency V (typical) at 400 A, 25 C 1.24 V CE(on) Performance optimized as output inverter stage for TIG Speed DC to 1 kHz welding machines Package Dual INT-A-PAK low profile Direct mounting on heatsink Circuit configuration Half bridge Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Collector to emitter voltage V 600 V CES T = 25 C 750 C (1) Continuous collector current I C T = 80 C 525 C Pulsed collector current I 1000 CM A Clamped inductive load current I 1000 LM T = 25 C 219 C Diode continuous forward current I F T = 80 C 145 C Gate to emitter voltage V 20 V GE T = 25 C 1563 C Maximum power dissipation (IGBT) P W D T = 80 C 875 C Any terminal to case RMS isolation voltage V 3500 V ISOL (V t = 1 s, T = 25 C) RMS J Note (1) Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals Revision: 11-Dec-17 Document Number: 93363 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-GA400TD60S www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 500 A 600 - - BR(CES) GE C V = 15 V, I = 300 A - 1.14 1.35 GE C V = 15 V, I = 400 A - 1.24 1.52 GE C Collector to emitter voltage V V CE(on) V = 15 V, I = 300 A, T = 125 C - 1.08 1.29 GE C J V = 15 V, I = 400 A, T = 125 C - 1.21 1.5 GE C J Gate threshold voltage V V = V , I = 250 A 3.0 4.6 6.3 GE(th) CE GE C V = 0 V, V = 600 V - 0.075 1 GE CE Collector to emitter leakage current I mA CES V = 0 V, V = 600 V, T = 125 C - 1.8 10 GE CE J I = 300 A - 1.48 1.75 FM I = 400 A - 1.63 1.98 FM Diode forward voltage drop V V FM I = 300 A, T = 125 C - 1.50 1.77 FM J I = 400 A, T = 125 C - 1.70 2.04 FM J Gate to emitter leakage current I V = 20 V - - 200 nA GES GE SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Turn-on switching loss E -8.5 - on I = 400 A, V = 360 V, V = 15 V, C CC GE Turn-off switching loss E - 113 - off R = 1.5 , L = 500 H, T = 25 C g J Total switching loss E - 121.5 - tot mJ Turn-on switching loss E -21- on Turn-off switching loss E - 163 - off Total switching loss E - 184 - tot I = 400 A, V = 360 V, V = 15 V, C CC GE Turn-on delay time t - 532 - d(on) R = 1.5 , L = 500 H, T = 125 C g J Rise time t - 377 - r ns Turn-off delay time t - 496 - d(off) Fall time t - 1303 - f T = 150 C, I = 1000 A, V = 400 V, J C CC Reverse bias safe operating area RBSOA V = 600 V, R = 22 V = 15 V to 0 V, Fullsquare P g GE L = 500 H Diode reverse recovery time t - 150 179 ns rr I = 300 A, dI /dt = 500 A/s, F F Diode peak reverse current I -43 59 A rr V = 400 V, T = 25 C CC J Diode recovery charge Q -3.9 6.3 C rr Diode reverse recovery time t - 236 265 ns rr I = 300 A, dI /dt = 500 A/s, F F Diode peak reverse current I -64 80 A rr V = 400 V, T = 125 C CC J Diode recovery charge Q - 8.6 11.1 C rr THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Operating junction and storage temperature range T , T -40 - 150 C J Stg IGBT - - 0.08 Junction to case per leg R thJC Diode - - 0.4 C/W Case to sink per module R -0.05 - thCS case to heatsink: M6 screw 4 - 6 Mounting torque Nm case to terminal 1, 2, 3: M5 screw 2 - 5 Weight - 270 - g Revision: 11-Dec-17 Document Number: 93363 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000