VS-FCSP240LTR

FCSP240LTR Vishay High Power Products FlipKY Chip Scale Package Schottky Barrier Rectifier FEATURES Ultra low V per footprint area F Low leakage RoHS Low thermal resistance COMPLIANT One-fifth footprint of SMA Super low profile (0.6 mm) Available tested on tape and reel APPLICATIONS Reverse polarity protection FlipKY Current steering Freewheeling Flyback Oring DESCRIPTION Vishay s FlipKY product family utilizes wafer level chip scale packaging to deliver Schottky diodes with the lowest V to PCB footprint area in industry. The four F PRODUCT SUMMARY bump 1.5 x 1.5 mm devices can deliver up to 1.5 A and 2 occupy only 2.3 mm of board space. The anode and I 1.5 A F(AV) cathode connections are made through solder bump pads on V 40 V R one side of the silicon enabling designers to strategically place the diodes on the PCB. This design not only minimizes board space but also reduces thermal resistance and inductance, which can improve overall circuit efficiency. Typical applications include hand-held, portable equipment such as cell phones, MP3 players, bluetooth, GPS, PDAs, and portable hard disk drives where space savings and performance are crucial. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS MAX. UNITS V 40 V RRM I Rectangular waveform 1.5 F(AV) A I 250 FSM V at 1.5 Apk, T = 125 C 0.42 V F J T - 55 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL FCSP240LTR UNITS Maximum DC reverse voltage V R 40 V Maximum working peak reverse voltage V RWM Document Number: 94498 For technical questions, contact: diodes-tech vishay.com www.vishay.com Revision: 23-Aug-07 1 FCSP240LTR Vishay High Power Products FlipKY Chip Scale Package Schottky Barrier Rectifier ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 97 C, rectangular waveform 1.5 F(AV) PCB Following any rated load 5 s sine or 3 s rect. pulse 250 A Maximum peak one cycle I condition and with rated FSM non-repetitive surge current at 25 C 10 ms sine or 6 ms rect. pulse 21 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 2.0 A, L = 5.0 mH 10 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS at 1.5 A 0.45 0.49 T = 25 C J Maximum forward at 3 A 0.55 0.60 (1) voltage drop V V FM at 1.5 A 0.37 0.42 See fig. 1 T = 125 C J at 3 A 0.51 0.57 V = Rated V 15 80 R R V = 20 V 3.5 20 R T = 25 C A J V = 10 V 2 10 R Maximum reverse V = 5 V 1.5 5 R (1) leakage current I RM V = Rated V 920 R R See fig. 2 V = 20 V 3.5 8 R T = 125 C mA J V = 10 V 2.5 6 R V = 5 V 2 5 R Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C - 160 pF T R DC Maximum voltage rate of charge dv/dt Rated V - 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS (1) Maximum junction temperature range T J - 55 to 150 C Maximum storage temperature range T Stg Typical thermal resistance, (2) R DC operation 40 thJL junction to PCB C/W Maximum thermal resistance, R 62 thJA junction to ambient Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB www.vishay.com For technical questions, contact: diodes-tech vishay.com Document Number: 94498 2 Revision: 23-Aug-07