SKP04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C 75% lower E compared to previous generation off combined with low conduction losses Short circuit withstand time 10 s G Designed for: E - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability (TO-220AB) Very soft, fast recovery anti-parallel Emitter Controlled Diode Pb-free lead plating RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : SKP04N60 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic R IGBT thermal resistance, 2.5 K/W t h J C junction case Diode thermal resistance, R 4.5 t h J C D junction case R Thermal resistance, 62 t h J A PG-TO-220-3-1 junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =500 A 600 - - V ( B R ) C E S G E C V V = 15V, I =4A Collector-emitter saturation voltage C E ( s a t ) G E C 1.7 2.0 2.4 T =25 C j - 2.3 2.8 T =150 C j Diode forward voltage V V =0V, I =4A F G E F T =25 C 1.2 1.4 1.8 j - 1.25 1.65 T =150 C j V Gate-emitter threshold voltage I =200 A,V =V 3 4 5 G E ( t h) C C E G E Zero gate voltage collector current I V =600V,V =0V A C E S C E G E T =25 C - - 20 j - - 500 T =150 C j Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S C E G E Transconductance g V =20V, I =4A 3.1 - S f s C E C Dynamic Characteristic Input capacitance C V =25V, - 264 317 pF i s s C E V =0V, Output capacitance C - 29 35 o s s G E f=1MHz Reverse transfer capacitance C - 17 20 r s s Gate charge Q V =480V, I =4A - 24 31 nC G a t e C C C V =15V G E Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 2) Short circuit collector current I V =15V,t 10 s - 40 - A C ( S C ) G E S C V 600V, C C T 150 C j 2) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.3 12.06.2013